Substrate Processing Apparatus Buffer Space Partitioning
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Solution Overview
Problem
Existing substrate processing methods face challenges in achieving uniformity of deposited layers, particularly in terms of thickness and composition, especially on nonplanar surfaces and in gap filling between metal lines, which can lead to electrical resistance and mechanical issues.
Innovation Solution
A substrate processing apparatus with a buffer space partitioned into diffusion regions and gas supply ports to control the distribution of reaction gas, allowing for adjustable gas flow rates to ensure uniform processing across different areas of the substrate, using a showerhead and partition members to create distinct diffusion regions and manage gas supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single gas supply system is used for the entire substrate surface, then the device complexity is reduced, but the manufacturing precision of film thickness uniformity deteriorates
Solution Approach 1:
The buffer space is divided into multiple diffusion regions using partition members, with each region having independent gas supply ports. This segmentation allows different gas flow rates to be supplied to different regions (central, intermediate, edge), enabling precise control of reaction gas distribution and achieving uniform film thickness across the substrate surface.
Solution Approach 2:
Different regions of the substrate receive different amounts of reaction gas through locally optimized gas supply ports. The edge regions receive higher gas flow rates to compensate for lower reaction efficiency, while the central region receives lower flow rates, creating a non-uniform gas distribution pattern that results in uniform film deposition across the entire substrate.
2Productivity
If gas flow rate is increased to improve deposition speed, then productivity is improved, but the manufacturing precision of film composition and uniformity deteriorates
Solution Approach 1:
The gas flow rate parameter is varied across different spatial regions of the substrate. By adjusting the flow rate of reaction gas supplied to each diffusion region independently, the system achieves both high deposition speed and uniform film composition. The intermediate and edge regions receive higher gas flow rates to maintain adequate reaction rates, while the central region receives lower flow rates to prevent excessive deposition.
3Device complexity
If uniform gas distribution is used across the substrate, then the device complexity is reduced, but the reliability of electrical properties and gap filling deteriorates
Solution Approach 1:
The buffer space is segmented into multiple diffusion regions with independent gas supply control. This segmentation enables tailored gas distribution that ensures adequate reaction gas supply to edge and intermediate regions, improving gap filling between metal lines and ensuring uniform electrical properties across the substrate, while maintaining a relatively simple overall device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach secures process uniformity by allowing for tailored gas distribution to achieve consistent film thickness and composition, reducing electrical resistance and mechanical damage risks.
Implementation Method 1
a buffer space is defined between the showerhead and the upper chamber; a partition member disposed in the buffer space to partition the buffer space into a plurality of diffusion regions
Data Source
AI summary
Provided is a substrate processing apparatus. The substrate processing apparatus includes a lower chamber having an opened upper side, an upper chamber opening or closing the upper side of the lower chamber, the upper chamber defining an inner space, in which a process is performed on a substrate, together with the lower chamber, a showerhead disposed on a lower portion of the upper chamber to supply a reaction gas toward the inner space, wherein a buffer space is defined between the showerhead and the upper chamber, a partition member disposed in the buffer space to partition the buffer space into a plurality of diffusion regions, and a plurality of gas supply ports disposed in the upper chamber to supply the reaction gas toward each of the diffusion regions.