Substrate Processing Apparatus Concentration Control

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Solution Overview

Problem

In single-substrate processing apparatuses, maintaining a constant silicon concentration in phosphoric acid aqueous solutions is challenging, leading to variations in etching amounts among substrates, which complicates uniform processing and reduces processing efficiency due to the need for frequent adjustments, and temperature variations in heated chemical liquids hinder uniform processing.

Innovation Solution

A substrate processing apparatus with a path changing mechanism that allows concurrent supply, collection, and concentration adjustment of processing liquids without stopping operations, using multiple tanks to maintain consistent concentrations and a heating system with infrared radiation and gas passage to prevent thermal conduction and fogging.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the phosphoric acid aqueous solution is supplied to every substrate in a single-substrate processing apparatus, then the substrates can be processed individually, but the silicon concentration of the phosphoric acid aqueous solution varies among substrates, leading to non-uniform etching amounts

Engineering Contradiction:

Improveprocessing efficiencyVSAvoiduniformity of etching amount

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The apparatus measures the silicon concentration of the phosphoric acid aqueous solution in real-time and provides feedback to the concentration adjustment mechanism, which automatically adjusts the concentration to maintain uniformity across multiple substrates

Inventive Principle:

Principle #23Feedback

Solution Approach 2:

The system dynamically changes the silicon concentration parameter of the phosphoric acid aqueous solution by adding silicon-containing substances or diluting with pure phosphoric acid, based on measured values, to maintain consistent etching performance across substrates

Inventive Principle:

Principle #35Parameter changes

2Manufacturing precision

If the silicon concentration is adjusted for a constant amount of phosphoric acid aqueous solution, then the concentration uniformity is improved, but the processing needs to be temporarily stopped, reducing processing efficiency

Engineering Contradiction:

Improvesilicon concentration uniformityVSAvoidprocessing efficiency

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The concentration adjustment mechanism operates continuously during substrate processing, adding silicon-containing substances or pure phosphoric acid to the circulating solution, thereby maintaining concentration uniformity without interrupting the processing workflow

Inventive Principle:

Principle #20Continuity of useful action

Solution Approach 2:

The system performs preliminary concentration adjustments by pre-mixing silicon-containing substances or pure phosphoric acid into the phosphoric acid aqueous solution before it reaches substrates, ensuring concentration uniformity is established in advance

Inventive Principle:

Principle #10Preliminary action

3Speed

If the phosphoric acid aqueous solution is heated to improve processing speed, then the etching rate increases, but temperature variations in the chemical liquid cause non-uniform processing

Engineering Contradiction:

Improveetching rateVSAvoiduniformity of processing

Core Design Contradiction:

SpeedVSManufacturing precision

Solution Approach 1:

The heating mechanism applies localized heating to specific regions of the phosphoric acid aqueous solution flow path, creating temperature gradients that ensure uniform temperature distribution in the solution contacting substrates, thereby achieving both high etching rate and uniform processing

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables uniform and efficient processing across multiple substrates by accurately adjusting chemical liquid concentrations and temperatures, preventing reductions in processing efficiency and ensuring high accuracy without interrupting operations.

Implementation Method 1

a heating device that heats the chemical liquid supplied to the substrate

Methodology Applied

Scientific EffectInfrared radiation: Infrared Radiation

Implementation Method 2

a gas passage to which gas is supplied by the gas supply system is formed between the first plate-shape member and the second plate-shape member

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS10580668B2Substrate processing apparatus and substrate processing method using substrate processing apparatus

Publication Date: 2020.03.03 SCREEN HOLDINGS CO LTD

AI summary

In a substrate processing apparatus, a phosphoric acid aqueous solution is supplied to a processor, and a liquid collection from the processor is concurrently performed. Further, a silicon concentration is adjusted, to supply an adjusted processing liquid to the processor. Thus, a phosphoric acid aqueous solution film is formed on the substrate. The liquid film is heated by a heating device. The heating device has lamp heaters in a casing made of a silica glass. The phosphoric acid aqueous solution on the substrate is irradiated with infrared rays. A nitrogen gas flowing in a gas passage formed in the casing is discharged towards a position outside an outer periphery of the substrate.