Substrate Processing Apparatus Dehydration Gas Film Uniformity

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Solution Overview

Problem

Existing substrate-processing apparatuses face challenges in achieving conformal film thickness on substrates with projections or recesses due to moisture generation during oxidation reactions, leading to excessive film formation at the top and insufficient coverage at the bottom of features like trenches.

Innovation Solution

The apparatus employs a dehydration gas, such as ethanol, to eliminate moisture from the substrate surface in the reaction-gas-processing space, separating the raw material and reaction gas streams using a separation gas to prevent mixing and ensure precise film deposition.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a reaction gas (ozone gas) is supplied to perform oxidation reaction on a substrate, then film formation is achieved, but moisture (H2O) is generated which causes excessive film formation at the top and insufficient coverage at the bottom of substrate features

Engineering Contradiction:
Improvefilm thickness uniformityVSAvoidmoisture generation
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent converts the harmful moisture generated during oxidation reaction into a beneficial effect by introducing a dehydration gas (such as hydrogen gas) that reacts with the moisture to form water vapor that can be easily removed. The harmful byproduct of the oxidation reaction (moisture) is transformed into a removable form through a secondary reaction, thereby solving the film uniformity problem while maintaining the film formation process

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent introduces a dehydration gas as an intermediary substance that mediates between the oxidation reaction and the film formation process. This intermediary gas reacts with the generated moisture to prevent its harmful effects, allowing the oxidation reaction to proceed while maintaining film thickness uniformity across substrate features

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If the raw material gas and reaction gas are supplied simultaneously, then film formation occurs, but mixing of gases leads to uncontrolled reactions and poor film quality

Engineering Contradiction:
Improvefilm qualityVSAvoidgas supply control
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent segments the gas supply process into distinct temporal stages: first supplying the raw material gas, then supplying the reaction gas after the raw material gas has been adsorbed on the substrate. This segmentation prevents harmful mixing and uncontrolled reactions, ensuring high film quality through controlled sequential processing

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent performs preliminary adsorption of the raw material gas on the substrate before introducing the reaction gas. This preliminary action ensures that the substrate surface is fully prepared with the necessary precursor species, allowing the subsequent oxidation reaction to proceed uniformly and produce high-quality film without gas mixing issues

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for stable and conformal film formation of zirconium oxide with improved overhang and step coverage, achieving target film thickness and quality by inhibiting excess reactions and ensuring adequate deposition at both the top and bottom of substrate features.

Implementation Method 1

a dehydration gas to eliminate moisture

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 2

supplying a raw material gas to a substrate that is accommodated inside the processing container

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 3

a reaction gas that reacts with the raw material gas... moisture (H2O) is generated through an oxidation reaction

Methodology Applied
Scientific EffectOxidation reaction: Oxidation

Data Source

PatentUS20250003070A1Substrate-processing apparatus and film-forming method
Publication Date: 2025.01.02 TOKYO ELECTRON LTD
  • US20250003070A1 patent drawing
  • US20250003070A1 patent drawing
  • US20250003070A1 patent drawing

AI summary

A substrate-processing apparatus includes a processing container, a raw material gas supply, a reaction gas supply, and a dehydration gas supply. The raw material gas supply is configured to supply an interior of the processing container with a raw material gas. The reaction gas supply is configured to supply the interior of the processing container with a reaction gas that reacts with the raw material gas. The dehydration gas supply is configured to supply the interior of the processing container with dehydration gas to eliminate moisture. The raw material gas is supplied to a substrate that is accommodated inside the processing container, followed by supplying the reaction gas and the dehydration gas to the substrate.