Substrate Processing Device Stabilizing Etching Amount via Dynamic Water Concentration Control
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Solution Overview
Problem
The stability of the etching amount in chemical solutions used for metal films on substrates is impaired due to concentration changes over time, particularly in solutions containing phosphoric acid, nitric acid, and water.
Innovation Solution
A substrate processing device with a control unit that adjusts the water concentration in a first liquid containing phosphoric acid and water by supplying a second liquid, typically water, to maintain stability during etching, using a flow rate adjustment mechanism and sensors to monitor and control the concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a chemical solution containing phosphoric acid and water is used for etching metal films, then the etching capability is maintained, but the concentration of phosphoric acid changes over time causing instability in etching amount
Solution Approach 1:
The system employs sensors to detect the concentration of phosphoric acid in the chemical solution and feeds this information back to a control unit. Based on the detected concentration, the control unit automatically adjusts the supply rate of phosphoric acid to maintain a stable etching amount, resolving the contradiction between maintaining etching capability and preventing concentration drift.
Solution Approach 2:
The invention dynamically changes the concentration parameter of the chemical solution by adjusting the phosphoric acid supply rate based on real-time concentration detection. This parameter adjustment ensures that the etching amount remains stable despite the natural tendency of concentration to change over time during the etching process.
2Productivity
If the chemical solution is used for an extended period, then productivity is improved, but the concentration change accumulates causing etching instability
Solution Approach 1:
The feedback control system continuously monitors phosphoric acid concentration and adjusts the supply rate accordingly, enabling the chemical solution to maintain stable etching performance over extended periods. This allows productive use of the solution to be extended without sacrificing etching stability.
Solution Approach 2:
The system maintains continuous etching operation with dynamic adjustment of phosphoric acid supply, ensuring that the useful action of etching continues steadily over time. The control unit ensures continuous stabilization of the chemical solution composition, allowing extended productive use without interruption or instability.
3Productivity
If the phosphoric acid concentration is increased to maintain etching speed, then etching efficiency is improved, but the concentration change over time becomes more significant
Solution Approach 1:
The system dynamically adjusts the phosphoric acid concentration parameter based on real-time detection, allowing the concentration to be optimized for etching speed while compensating for the increased rate of change. The control unit modifies the supply rate to maintain both high etching efficiency and compositional stability.
Solution Approach 2:
The invention transitions from a static chemical solution composition to a dynamic system where phosphoric acid concentration is continuously adjusted. This dynamic approach allows the system to adapt to changing conditions and maintain stable etching performance even at higher concentrations that would otherwise lead to faster concentration drift.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach stabilizes the etching amount of metal films by compensating for changes in phosphoric acid concentration, ensuring consistent etching performance and extending the solution's effective use time.
Implementation Method 1
a first liquid in which an acid liquid containing phosphoric acid and water are mixed, the first liquid being capable of etching a metal film provided on a substrate
Data Source
AI summary
A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.