Substrate Processing Gas Flow Control for Film Thickness Uniformity
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in controlling the inter-substrate film thickness distribution of thin films formed on multiple substrates, leading to variations in film thickness across different substrates.
Innovation Solution
A technique involving the arrangement of substrates with varying surface areas in a process chamber, where a dilution gas is supplied at different flow rates to specific regions to control the concentration and distribution of processing gases, ensuring uniform film thickness across all substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If substrates with different surface areas are arranged in a process chamber for manufacturing semiconductor devices, then productivity is improved by processing multiple substrates simultaneously, but manufacturing precision deteriorates due to variations in film thickness distribution across substrates
Solution Approach 1:
The patent applies local quality by dividing the process chamber into multiple gas supply regions with different dilution gas flow rates. Specifically, regions with smaller substrates receive higher dilution gas flow rates to reduce processing gas concentration and prevent excessive film thickness, while regions with larger substrates receive lower dilution gas flow rates to maintain sufficient processing gas concentration for adequate film formation. This localized adjustment of gas flow parameters enables uniform film thickness across substrates of different sizes while maintaining high productivity through simultaneous multi-substrate processing.
Solution Approach 2:
The patent implements parameter changes by dynamically adjusting the dilution gas flow rate for each gas supply region based on substrate size and position. The control unit varies the dilution gas flow rate parameter across different regions to compensate for the varying consumption of processing gas by substrates of different surface areas. This parameter adjustment strategy ensures that the effective processing gas concentration is optimized for each region, achieving uniform film thickness distribution while processing multiple substrates simultaneously, thus resolving the contradiction between productivity and manufacturing precision.
2Ease of operation
If uniform processing gas concentration is supplied to all regions, then ease of operation is improved by simplifying gas supply control, but manufacturing precision deteriorates due to inability to control inter-substrate film thickness distribution
Solution Approach 1:
The patent applies segmentation by dividing the process chamber into multiple gas supply regions, each with independent dilution gas flow rate control. Instead of using a single uniform gas supply system, the chamber is segmented into zones corresponding to different substrate positions and sizes, with each zone having its own dilution gas supply. This segmentation enables precise local control of processing gas concentration in each region, allowing the system to achieve uniform film thickness across diverse substrates while maintaining relatively simple operation through automated regional control.
3Manufacturing precision
If dilution gas flow rate is increased in regions with smaller substrates, then manufacturing precision is improved by reducing film thickness variations, but device complexity increases due to need for regional flow rate control
Solution Approach 1:
The patent implements universality by designing a control unit that manages multiple gas supply regions with different dilution gas flow rates using a single integrated system. The control unit performs multiple functions: it regulates dilution gas flow rates for each region, coordinates processing gas supply, and adjusts parameters based on substrate configuration. This multi-functional approach enables the system to handle diverse substrate sizes and positions with a unified control mechanism, achieving precise film thickness control across regions without proportionally increasing overall system complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces variations in film thickness between substrates by adjusting gas flow rates and concentrations, achieving more uniform thin film formation on substrates with different surface areas.
Implementation Method 1
supplying a dilution gas to a first supply region, which includes a region where at least a part of the plurality of first substrates are arranged and does not include a region where the second substrate is arranged, of the substrate arrangement region, or not performing a supply of the dilution gas to the first supply region, and supplying the dilution gas to at least one second supply region, which is a region other than the first supply region and includes the region where the second substrate is arranged, of the substrate arrangement region at a flow rate larger than a flow rate of the dilution gas supplied to the first supply region
Implementation Method 2
forming a thin film on each of the plurality of first substrates by supplying a processing gas to a substrate arrangement region
Data Source
AI summary
There is provided a technique that includes: (a) arranging a plurality of first substrates and a second substrate having a smaller surface area than the first substrates and accommodating the plurality of first substrates and the second substrate in a process chamber; and (b) forming a thin film on each of the plurality of first substrates by supplying a processing gas to a substrate arrangement region in which the plurality of first substrates and the second substrate are arranged, wherein (b) includes: (c) supplying a dilution gas to a first supply region of the substrate arrangement region, or not performing a supply of the dilution gas to the first supply region, and supplying the dilution gas to at least one second supply region of the substrate arrangement region at a flow rate larger than a flow rate of the dilution gas supplied to the first supply region.