Substrate Processing Apparatus Dual Exhaust Segmentation
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Solution Overview
Problem
In vertical substrate processing apparatuses, purging the adiabatic region can adversely affect the uniformity of film formation in the processing region due to the flow of purge gases.
Innovation Solution
The apparatus includes a process chamber with a processing region and an adiabatic region, featuring separate exhaust portions for each area, where the second exhaust portion is positioned to overlap with the adiabatic region in the height direction, allowing for effective purging without contaminating the processing region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a purge gas is introduced into the process chamber to purge the adiabatic region, then the adiabatic region is effectively purged, but the process gas in the processing region is diluted and uniformity of film formation is adversely affected
Solution Approach 1:
The exhaust system is segmented into two independent portions: a first exhaust portion for the processing region and a second exhaust portion for the adiabatic region. This segmentation allows independent control of gas flow and pressure in each region, enabling effective purging of the adiabatic region without introducing purge gas into the processing region, thus maintaining film formation uniformity
Solution Approach 2:
Different exhaust characteristics are applied to different regions: the first exhaust portion is configured to maintain positive pressure in the processing region to prevent purge gas intrusion, while the second exhaust portion creates negative pressure in the adiabatic region to enable effective purging. This local differentiation of exhaust properties resolves the contradiction between effective purging and film formation quality
Data Source
AI summary
Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. A first exhaust portion for discharging an atmosphere of the processing region, and a second exhaust portion for discharging an atmosphere of the adiabatic region, formed at a position overlapping with the adiabatic region in a height direction, are included.