Substrate Processing Apparatus Dual Gas Supply Plasma Uniformity
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Solution Overview
Problem
Existing substrate processing technologies face challenges in generating both low-pressure and high-pressure non-equilibrium plasma with uniformity and stability, leading to degradation of film quality on side walls of patterns during plasma atomic layer deposition and chemical vapor phase deposition processes.
Innovation Solution
A substrate processing apparatus and method that utilize a chamber with a shower head featuring slits and an opening/closing mechanism, allowing for downflow and sideflow processing, where radiofrequency waves are applied to generate plasma, enabling the generation of low-pressure and high-pressure non-equilibrium plasma with uniformity and stability by controlling gas flow through slits and side surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If low-pressure plasma is used for plasma atomic layer deposition or chemical vapor phase deposition, then the deposition process can be performed, but the plasma radiation to side walls is weak and film quality on side walls degrades
Solution Approach 1:
The gas supply is segmented into two independent paths: a first gas supply part supplying gas through the shower head, and a second gas supply part supplying gas from the side wall of the chamber. This segmentation allows independent optimization of gas flow for top-down deposition and side wall coverage, resolving the contradiction between deposition capability and side wall film quality.
Solution Approach 2:
The invention transitions from a single vertical gas supply direction to a two-dimensional gas supply approach by adding side wall gas supply. This dimensional change enables plasma to reach side walls effectively, improving film quality on side walls while maintaining the benefits of low-pressure plasma deposition.
2Manufacturing precision
If high-pressure plasma is used to improve side wall film quality, then isotropic plasma radiation is achieved, but the plasma easily changes into thermal equilibrium plasma such as arc
Solution Approach 1:
The invention maintains low-pressure conditions (avoiding high-pressure plasma) while changing the gas supply distribution pattern to achieve isotropic plasma radiation. By supplying gas from both the shower head and side walls, the plasma achieves uniform radiation to side walls without transitioning to thermal equilibrium plasma, thus maintaining stability.
3Quantity of substance
If a shower head type upper electrode is used in high-pressure region, then gas distribution is achieved, but shower head hole discharge occurs causing degradation of in-plane uniformity
Solution Approach 1:
The invention introduces a side wall gas supply as an intermediary path for gas delivery. This alternative gas supply path allows gas to reach the substrate and side walls without forcing it through the shower head holes at high pressure, thereby preventing shower head hole discharge while maintaining effective gas distribution.
4Adaptability or versatility
If a single chamber is used for both low-pressure and high-pressure processing, then versatility is achieved, but generating uniform and stable non-equilibrium plasma at both pressures is difficult
Solution Approach 1:
The invention creates a universal gas supply system that can effectively deliver gas for plasma generation at both low and high pressures through its dual gas supply paths. The first gas supply part (shower head) and second gas supply part (side wall) work together to provide versatile processing capability while maintaining plasma uniformity and stability across different pressure conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively improves film quality on side walls by alternating between downflow and sideflow processes, preventing shower head hole discharge and ensuring uniform plasma generation, thereby enhancing the quality and stability of film formation across the substrate.
Implementation Method 1
radiofrequency waves are applied to the shower head and/or the stage to perform plasma processing on a substrate on the stage
Data Source
AI summary
A substrate processing apparatus includes a chamber, a stage provided in the chamber, a shower head in which a plurality of slits are formed, and which is opposed to the stage, an opening/closing part for opening and closing the plurality of slits, a first gas supply part which supplies a gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which is connected to a side wall of the chamber, and which supplies a gas to the space between the stage and the shower head.