Substrate Processing Apparatus with Dual Heating Units
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in achieving uniform temperature elevation across the substrate surfaces due to differences in heating methods, leading to non-uniform temperature distribution and difficulties in increasing film thickness without altering process conditions.
Innovation Solution
A substrate processing apparatus with a dual substrate support system and controlled gas supply and pressure management, where the substrate is initially heated on one support unit and then transferred to another, with gas pressure increased to enhance temperature uniformity and rapid heating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the substrate is heated by a single heating unit from one direction, then the heating speed is fast, but the temperature uniformity across the substrate surface deteriorates
Solution Approach 1:
The heating function is segmented into two independent heating units: one heating unit positioned below the substrate support unit and another heating unit positioned above the substrate. This segmentation allows each heating unit to independently heat different surfaces of the substrate, resolving the contradiction by enabling both fast heating (through combined heating power) and temperature uniformity (through distributed heating from multiple directions).
Solution Approach 2:
The heating approach transitions from one-dimensional (single direction) to three-dimensional heating by positioning heating units both below and above the substrate. This dimensional expansion allows heat to be applied from multiple directions simultaneously, achieving both rapid temperature elevation and uniform distribution across the substrate surface.
2Productivity
If the substrate is heated rapidly, then the processing efficiency is improved, but the temperature distribution uniformity across the substrate deteriorates
Solution Approach 1:
The heating system is segmented into multiple heating units positioned at different locations (below and above the substrate). This segmentation enables simultaneous heating from multiple zones, allowing rapid overall heating while maintaining uniform temperature distribution, thus improving processing efficiency without sacrificing manufacturing precision.
Solution Approach 2:
Different regions of the substrate receive heating from different heating units tailored to their specific needs. The heating units are positioned to provide localized heating where required, ensuring that each area of the substrate achieves uniform temperature elevation, thereby maintaining manufacturing precision while improving overall processing efficiency.
3Device complexity
If a single substrate support unit is used, then the device complexity is low, but the temperature uniformity and film thickness control deteriorate
Solution Approach 1:
The substrate support system is segmented into two distinct substrate support units: a first substrate support unit for loading and initial heating, and a second substrate support unit for processing. This segmentation enables optimized temperature control and film thickness uniformity in each stage, improving manufacturing precision while maintaining manageable device complexity through modular design.
Solution Approach 2:
The first substrate support unit performs preliminary heating of the substrate before it is transferred to the second substrate support unit for processing. This preliminary action ensures the substrate reaches the required temperature uniformly before the actual processing begins, improving film thickness uniformity without requiring the second support unit to handle both heating and processing functions, thus controlling device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures rapid and uniform temperature elevation across the substrate, improving temperature uniformity and allowing for increased film thickness without significant changes in process conditions.
Implementation Method 1
heating to elevate the temperature of the substrate supported on the first substrate support unit by the heating unit
Implementation Method 2
when the substrate is heated in any of the directions, the degree of heating is different between the surface in contact with the substrate support unit
Implementation Method 3
increasing the pressure in the process chamber during elevation of the temperature of the substrate supported on the first substrate support unit to higher than the pressure during loading of the substrate
Data Source
AI summary
The temperature of a substrate is elevated rapidly while improving the temperature uniformity of the substrate. The substrate is loaded into a process chamber, the loaded substrate is supported on a first substrate support unit, a gas is supplied to the process chamber, the temperature of the substrate supported on the first substrate support unit is elevated in a state of increasing the pressure in the process chamber to higher than the pressure during loading of the substrate or in a state of increasing the pressure in the process chamber to higher than the pressure during processing for the surface of the substrate, the substrate supported on the first substrate support unit is transferred to the second substrate support unit and supported thereon after lapse of a predetermined time, and the surface of substrate is processed while heating the substrate supported on the second substrate support unit.