Substrate Processing Method with Dual-Region Chamber
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Solution Overview
Problem
Existing substrate processing methods struggle to efficiently manufacture devices with various characteristics, such as doping devices and multi thin film structures, due to limitations in gas injection and substrate rotation techniques.
Innovation Solution
A substrate processing method that divides the processing space into two regions, allowing for sequential and separate processing steps using different source and reactant gases, with controlled gas injection and substrate movement to adjust processing times and prevent contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the gas injection unit always injects a constant gas and the supporting unit rotates continuously, then the processing process is simple to operate, but it is difficult to manufacture devices with various characteristics like doping devices and multi thin film structures
Solution Approach 1:
The processing chamber is divided into multiple processing regions (first processing region and second processing region), each with dedicated gas injection units. This segmentation allows different gases to be injected into different regions simultaneously, enabling diverse processing operations on different parts of the substrate at the same time, thus achieving device variety without increasing overall operational complexity
Solution Approach 2:
Different regions of the processing chamber are assigned different gas types and processing conditions tailored to specific device requirements. For example, the first processing region may use source gas for film deposition while the second region uses reactant gas for surface treatment, allowing each region to have optimized local conditions for its specific function
2Adaptability or versatility
If the processing space is divided into multiple regions with different gas injections, then processing flexibility and device variety increase, but the device complexity and control difficulty increase
Solution Approach 1:
The supporting unit is designed to rotate and position substrates in different regions, serving multiple functions including substrate transport, positioning, and exposure control. This multi-functional design allows a single component to handle diverse processing requirements without proportionally increasing system complexity
Solution Approach 2:
The supporting unit rotates continuously or intermittently to maintain substrate exposure to processing gases, ensuring continuous film deposition or treatment. This continuous action eliminates idle time and maintains processing efficiency despite the divided chamber configuration
3Manufacturing precision
If the supporting unit stops rotating during processing, then processing precision and film quality improve, but productivity decreases due to longer total processing time
Solution Approach 1:
The processing chamber is divided into multiple regions allowing different processing steps to occur simultaneously in different locations. While one region performs precision deposition with the substrate stationary, another region can perform different processing, effectively parallelizing operations and maintaining productivity
Solution Approach 2:
The supporting unit alternates between stopping for precision processing and rotating for rapid repositioning between processing regions. This periodic action allows the substrate to be quickly moved to different regions for different processing steps, reducing total cycle time while maintaining film quality during the stationary processing phases
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the adjustment of processing times for thin film growth, enhances cleaning efficiency, reduces cleaning costs, and increases productivity by preventing gas mixing and contamination within the chamber.
Implementation Method 1
a gas injection unit which injects a gas toward the supporting unit. The substrate processing apparatus performs a processing process on a substrate by using a source gas and a reactant gas injected by the gas injection unit
Implementation Method 2
a supporting unit which supports a substrate, and rotates to move the substrate between a first processing region and a second processing region
Implementation Method 3
a step of injecting a first reactant gas into the second processing region; and a step of generating plasma in the second processing region
Data Source
AI summary
The present inventive concept relates to a substrate processing method in which a processing process is performed on a substrate in a processing space divided into a first processing region and a second processing region. The substrate processing method comprises the steps of: performing a first processing process on a substrate in the first processing region when the substrate supported by the support part is positioned in the first processing region; moving the substrate to the second processing region by rotating the support part when the first processing process is completed; and performing a second processing process on the substrate in the second processing region when the substrate supported by the support part is positioned in the second processing region.