Substrate Processing Gas Exhaust Ejector Uniformity

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Solution Overview

Problem

Current substrate processing apparatuses face challenges in uniformly controlling the flow rate and temperature of gases during atomic layer deposition, leading to inconsistencies in substrate processing.

Innovation Solution

The apparatus incorporates a gas supply unit with adjustable injectors and a gas exhaust unit featuring an ejector, allowing for individual control of gas flow rates and temperatures across multiple regions within the processing container, enabled by replaceable injectors and ejectors with varying configurations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a conventional gas supply and exhaust system is used, then the structure is simple, but the uniformity of gas supply and exhaust across different regions is poor

Engineering Contradiction:
Improveuniformity of gas supply and exhaustVSAvoidstructure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The processing container is divided into multiple regions (first region and second region), each equipped with separate gas supply injectors and exhaust ejectors. This segmentation allows independent control of gas flow rates and temperatures for each region, achieving uniform gas supply and exhaust across different areas while maintaining a relatively simple overall structure through modular design.

Inventive Principle:
Principle #1Segmentation

2Adaptability or versatility

If fixed gas supply and exhaust configuration is used, then the device is simple to operate, but the adaptability to different processing requirements is limited

Engineering Contradiction:
Improvecontrol flexibility of gas flow rates and temperaturesVSAvoidoperational complexity
Core Design Contradiction:
Adaptability or versatilityVSEase of operation

Solution Approach 1:

The gas supply injectors and exhaust ejectors are designed to be movable and adjustable within the processing container. The gas supply unit can independently control gas flow rates and temperatures for each injector, while the exhaust unit can independently control exhaust flow rates for each ejector. This dynamic configurability allows adaptation to different processing requirements without significantly complicating operation, as the system automatically manages the complex control parameters.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS20240295023A1Substrate processing apparatus
Publication Date: 2024.09.05 TOKYO ELECTRON LTD
  • US20240295023A1 patent drawing
  • US20240295023A1 patent drawing
  • US20240295023A1 patent drawing

AI summary

A substrate processing apparatus includes: a processing container capable of accommodating a substrate holder that holds substrates; a gas exhaust chamber provided in a side wall of the processing container, an exhaust-side pipe extending horizontally from the gas exhaust chamber, and an ejector detachably disposed spanning through the gas exhaust chamber and the exhaust-side pipe.