Substrate Processing Apparatus Film Formation Stabilization
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Solution Overview
Problem
The existing film-forming processes for semiconductor devices face challenges in stabilizing the film-forming rate and quality, particularly when using gases containing a hydroxyl group, as they tend to result in decreased rates and altered film quality over repeated batch processes due to moisture adherence and reaction byproducts in the process chamber.
Innovation Solution
A method involving a substrate processing apparatus where a film is formed by supplying a gas including a hydroxyl group at a first temperature, followed by increasing the chamber temperature to a second higher temperature and maintaining it in the absence of the substrate to remove adhered moisture, thereby stabilizing the film-forming rate and quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a gas including a hydroxyl group is supplied to form a film on the substrate, then the film-forming process can proceed, but the film-forming rate and film quality deteriorate in repeated batch processes due to moisture adherence and reaction byproducts
Solution Approach 1:
The patent applies preliminary action by performing a temperature increase step after film formation to proactively remove moisture and reaction byproducts from the process chamber before the next batch process begins. This preventive measure eliminates the accumulation of harmful substances that would otherwise degrade film quality and forming rate in subsequent batches, thereby maintaining consistent film characteristics across multiple processing cycles.
2Manufacturing precision
If the process chamber temperature is increased to remove moisture and reaction byproducts, then film quality stabilizes, but additional processing time is required
Solution Approach 1:
The patent implements periodic action by incorporating a temperature increase step at regular intervals between batch processes. This periodic thermal treatment removes accumulated moisture and reaction byproducts from the process chamber, ensuring that each subsequent batch process starts with clean conditions. The周期性 nature of this temperature increase maintains film quality consistency across multiple batches while minimizing the impact on overall production efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively stabilizes the film-forming rate and quality by ensuring efficient removal of moisture and impurities, preventing degradation and maintaining consistent film performance across multiple batch processes.
Implementation Method 1
changing the temperature of the inside of the process chamber from the first temperature to a second temperature higher than the first temperature... maintaining the temperature of the inside of the process chamber at the second temperature at least in a state that the substrate is not in the process chamber
Data Source
AI summary
According to the present invention, when a film is formed on a substrate, a film-forming rate or film quality is stabilized. There is provided a method of manufacturing a semiconductor device, including: (a) forming a film on a substrate by supplying at least a gas including hydroxyl group to the substrate in a process chamber while maintaining a temperature of an inside of the process chamber at a first temperature; (b) changing the temperature of the inside of the process chamber from the first temperature to a second temperature higher than the first temperature; and (c) maintaining the temperature of the inside of the process chamber at the second temperature at least in a state that the substrate is not in the process chamber.