Substrate Processing Apparatus with Flow Control for Uniform Deposition
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Solution Overview
Problem
Batch-type substrate processing apparatuses face limitations in achieving uniform deposition rates due to lateral injection of process gases, while single wafer-type apparatuses suffer from low process yield due to processing only one substrate at a time.
Innovation Solution
A substrate processing apparatus with multiple sub chambers, each equipped with a substrate support, shower head, exhaust port connected to a common exhaust part, and a flow control part featuring a cover plate and movable plate to adjust exhaust flow uniformly around the substrate support.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a batch-type substrate processing apparatus accommodates multiple substrates in a vertical process tube, then productivity is improved by processing multiple substrates simultaneously, but manufacturing precision deteriorates because the process gas cannot be injected perpendicular to the deposition surface, causing varying deposition rates
Solution Approach 1:
The processing chamber is divided into multiple sub-chambers, each capable of independently accommodating substrates and controlling process gases. This segmentation allows each sub-chamber to maintain optimal gas injection perpendicular to the substrate surface while collectively processing multiple substrates, thus resolving the contradiction between productivity and deposition uniformity
Solution Approach 2:
Each sub-chamber is equipped with its own shower head and exhaust system, creating locally optimized processing environments. The process gas can be injected perpendicular to each substrate's deposition surface in each sub-chamber, ensuring uniform deposition rates while maintaining high overall productivity through multi-substrate processing
2Manufacturing precision
If a single wafer-type substrate processing apparatus processes only one substrate at a time, then manufacturing precision is maintained with uniform deposition, but productivity deteriorates due to low process yield
Solution Approach 1:
Multiple single-wafer-type sub-chambers are merged into a single batch processing apparatus. Each sub-chamber maintains the ability to process one substrate with uniform deposition control, while the combined system can simultaneously process multiple substrates across different sub-chambers, thereby achieving both high productivity and maintained manufacturing precision
Solution Approach 2:
The apparatus integrates the capabilities of multiple single-wafer processors into one multi-functional system. Each sub-chamber can independently process substrates with uniform deposition, while the overall system provides batch processing capability, making the apparatus universally applicable for high-volume production while maintaining quality
3Device complexity
If a common exhaust part is used for multiple sub-chambers, then device complexity is reduced, but manufacturing precision deteriorates because exhaust flow distribution becomes uneven across different sub-chambers
Solution Approach 1:
Each sub-chamber is equipped with its own flow control part that can independently adjust exhaust flow parameters. This allows local optimization of exhaust flow in each sub-chamber while maintaining a common exhaust part structure, thus achieving uniform exhaust flow distribution without significantly increasing overall device complexity
Solution Approach 2:
The flow control parts in each sub-chamber can dynamically adjust exhaust flow rates based on specific processing requirements. This dynamic control capability allows the system to compensate for potential flow distribution unevennesses while maintaining a relatively simple common exhaust structure, balancing device complexity with manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus ensures uniform processing of substrates across each sub chamber by adjusting the exhaust flow of process gases, thereby improving process yield and achieving consistent deposition thickness across the entire substrate.
Implementation Method 1
a substrate processing apparatus that is capable of depositing reaction particles contained in a process gas injected into a processing space by using a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method
Implementation Method 2
a substrate processing apparatus that is capable of depositing reaction particles contained in a process gas injected into a processing space by using a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method
Implementation Method 3
a common exhaust part connected to the plurality of sub chambers to exhaust the inside of each of the plurality of sub chambers
Data Source
AI summary
Provided is a substrate processing apparatus that performs respectively processes on a plurality of substrates in a plurality of sub chambers. The substrate processing apparatus includes a plurality of sub chambers in which processes are performed on a substrate, respectively, and a common exhaust part connected to the plurality of sub chambers to exhaust the inside of each of the plurality of sub chambers. Each of the plurality of sub chambers includes a substrate support on which the substrate is supported, a shower head provided to face the substrate support and configured to supply a process gas toward the substrate, an exhaust port provided below the substrate support and connected to the common exhaust part, and a flow control part including a cover plate provided along a circumference of the substrate support and configured to adjust an exhaust flow of the process gas to a lower portion of the substrate support.