Substrate Processing Apparatus Gas Exhaustion Control
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Solution Overview
Problem
The generation of particles within the process chamber during the manufacturing of semiconductor devices, particularly when supplying oxygen-containing and hydrogen-containing gases, poses a challenge that existing technologies have not effectively addressed.
Innovation Solution
A technique involving a cycle of gas supply and exhaustion is implemented, where the exhaust rate and amount of oxygen-containing and hydrogen-containing gases are set higher than those of the precursor gas, and a purge process is prolonged to reduce particle generation, using a substrate processing apparatus with specific nozzle configurations and gas supply systems.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If oxygen-containing gas and hydrogen-containing gas are supplied to the process chamber during film formation, then the film quality can be improved through proper chemical reactions, but a large amount of particles are generated within the process chamber
Solution Approach 1:
The patent segments the gas supply process into distinct sequential stages: precursor gas supply stage, oxygen-containing gas supply stage, and hydrogen-containing gas supply stage. By dividing the simultaneous supply into separate time-separated stages, the patent prevents particle-generating gas phase reactions while maintaining the beneficial chemical reactions needed for film formation. Each gas is supplied only when the previous gas has been completely exhausted from the process chamber.
Solution Approach 2:
The patent implements periodic action through cyclic gas supply and exhaustion sequences. The process chamber undergoes repeated cycles of introducing one gas type, completely exhausting it, then introducing the next gas type. This periodic sequencing ensures that reactive gases (oxygen-containing and hydrogen-containing) are never present simultaneously with precursor gas, thereby preventing particle formation while allowing controlled chemical reactions at different time intervals.
2Object-generated harmful factors
If the exhaust rate of oxygen-containing gas and hydrogen-containing gas is increased to suppress particle generation, then the amount of particles is reduced, but the processing time and cycle duration increase
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting the exhaust rate based on the type of gas being supplied. During oxygen-containing gas supply, the exhaust rate is set to a first value optimized for removing oxygen-containing gas and reaction byproducts. During hydrogen-containing gas supply, the exhaust rate is changed to a second value optimized for hydrogen-containing gas removal. These parameter adjustments ensure complete gas exhaustion and particle suppression while minimizing unnecessary time extension compared to using a uniformly high exhaust rate throughout.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses particle generation, improving the quality of the SiOCN film formed on the substrate by preventing gas phase reactions and reducing the amount of particles within the process chamber and nozzles, thereby enhancing film quality and controllability.
Implementation Method 1
a vacuum pump 246 connected to the exhaust pipe 231
Implementation Method 2
a heater 207 configured to heat the substrate 200
Implementation Method 3
forming a film on a substrate 200 accommodated in a process chamber 201 by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate 200 in the process chamber 201
Data Source
AI summary
A Technique includes forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a precursor gas to the substrate, exhausting the precursor gas from the process chamber, supplying an oxygen-containing gas to the substrate, exhausting the oxygen-containing gas from the process chamber, supplying a hydrogen-containing gas to the substrate, and exhausting the hydrogen-containing gas from the process chamber. At least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the oxygen-containing gas is set greater than that in the act of exhausting the precursor gas, and at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the hydrogen-containing gas is set greater than that in the act of exhausting the precursor gas.