Substrate Processing Apparatus Gas Supply Nozzle Uniformity
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Solution Overview
Problem
In vertical type substrate processing apparatuses, the uniformity of films across multiple substrates can vary significantly in the vertical direction due to non-uniform gas distribution, leading to inconsistencies in film formation during semiconductor device manufacturing.
Innovation Solution
A substrate processing apparatus is designed with a process chamber, a supply buffer part, and a gas supply system featuring a short nozzle that supplies precursor gases in two stages, with slits on the inner wall to ensure uniform gas diffusion and prevent decomposition, improving inter-plane uniformity by controlling gas flow and pressure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a vertical type substrate processing apparatus is used to support multiple substrates, then substrate processing capacity is improved, but inter-plane uniformity of films deteriorates
Solution Approach 1:
The gas supply system is segmented into multiple independent gas supply nozzles, each corresponding to a specific substrate position. Each nozzle can supply gas independently to its corresponding substrate, allowing for position-specific gas flow control that compensates for vertical uniformity issues while maintaining multi-substrate processing capability
Solution Approach 2:
The gas supply nozzles are positioned at different heights and angles to provide locally optimized gas distribution for each substrate position. The nozzle structures include adjustable components that can be tuned to deliver appropriate gas flow characteristics to substrates at different vertical positions, ensuring uniform film formation across all planes
2Productivity
If gas flow rate is increased to improve film formation speed, then productivity is improved, but gas decomposition and byproduct generation worsen
Solution Approach 1:
The system enables dynamic adjustment of gas flow parameters including flow rate, temperature, and pressure for each nozzle. By optimizing these parameters individually for each substrate position and process stage, the system achieves high film formation speeds while maintaining gas stability and preventing decomposition
Solution Approach 2:
The gas supply nozzles are designed to deliver gas in controlled stages, with preliminary gas supply occurring before the main film formation process. This preliminary action allows the gas to stabilize and reach optimal conditions before contact with substrates, preventing decomposition while ensuring efficient film formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances inter-plane uniformity by preventing precursor gas decomposition, reducing byproduct generation, and maintaining film quality, allowing for consistent film thickness distribution across substrates without frequent heater adjustments.
Implementation Method 1
a supply buffer part adjacent to the process chamber; a first gas supply part installed in the supply buffer part; a second gas supply part installed in the supply buffer part
Implementation Method 2
controlling gas flow and pressure
Implementation Method 3
an inner wall which is installed between the supply buffer part and the process chamber, and on which a plurality of slits are formed so as to correspond to the substrates supported by the substrate support
Implementation Method 4
The first gas supply part includes a first gas nozzle having a supply hole which is opened upward at a leading end, and the supply hole is disposed at a position which is equal to or lower than a height of the substrate at a lowermost end of the substrate support
Data Source
AI summary
There is provided a technique that includes: a process chamber accommodating a substrate support supporting substrates in multiple stages to process the substrates; a supply buffer part adjacent the process chamber; a first gas supply part installed in the supply buffer part; a second gas supply part installed in the supply buffer part; an inner wall installed between the supply buffer part and the process chamber, on which a plurality of slits are formed to correspond to the substrates; and a maintenance port disposed at a lower end of the inner wall, wherein the first gas supply part includes a first gas nozzle having a supply hole that supplies first gas into the supply buffer part.