Substrate Processing Apparatus Heat Exchange Manifold Temperature Control
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Solution Overview
Problem
The existing substrate processing apparatuses face challenges in maintaining the temperature of the manifold below the heat-resistant temperature during high-temperature substrate processing, leading to potential heat deterioration of components due to inadequate heat insulation and gas transportation.
Innovation Solution
A substrate processing apparatus is designed with a first heat exchange unit supporting the substrate holder from the lower side and a second heat exchange unit positioned horizontally apart, performing heat exchange with the gas in the process chamber to manage and reduce heat transfer to the manifold, while an induction heating unit applies heat externally.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat insulating material is used to cover the process chamber periphery, then heat retention and temperature distribution homogenization are improved, but heat transportation to the manifold by carrier gas is not prevented, causing manifold temperature to exceed heat-resistant limits
Solution Approach 1:
The heat exchange unit is divided into multiple segments (first heat exchange unit with multiple first heat exchange members, second heat exchange unit with multiple second heat exchange members) arranged in series along the gas flow path. This segmentation allows progressive heat extraction at different stages, effectively reducing the temperature of carrier gas before it reaches the manifold while maintaining temperature homogeneity in the process chamber.
Solution Approach 2:
The heat exchange unit acts as an intermediary between the hot process chamber and the manifold. It introduces heat exchange members that contact the carrier gas flow and transfer excess heat to these members, which then dissipate it to the surrounding environment. This intermediary mechanism prevents direct heat transportation to the manifold while maintaining process chamber temperature control.
2Productivity
If high-temperature substrate processing is performed, then substrate processing capability is improved, but radiation and heat transportation to the manifold become intense, causing heat deterioration of manifold components
Solution Approach 1:
The heat exchange unit is positioned to intercept carrier gas before it reaches the manifold. By performing preliminary cooling of the carrier gas in the region between the substrate holder and manifold, the system prevents intense heat transportation from reaching the manifold components. This preliminary action allows high-temperature substrate processing while protecting the manifold from thermal damage.
Solution Approach 2:
The intense heat and radiation from high-temperature substrate processing, which would normally be harmful to the manifold, are converted into a beneficial cooling opportunity. The heat exchange members absorb this excess thermal energy from the carrier gas and radiation, transferring it to the heat exchange unit structure which then dissipates it safely. The harmful thermal energy is thus converted into a controllable heat exchange process that protects the manifold.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses heat deterioration of components on the lower side of the process chamber, maintains the manifold within a safe temperature range, and enhances the uniformity and productivity of the substrate processing by promoting efficient heat exchange and gas flow.
Implementation Method 1
an induction heating unit configured to subject the object to be heated to an induction heating from an outer side of the object to be heated
Implementation Method 2
a first heat exchange unit supporting the substrate holder from a lower side in the process chamber, the first heat exchange unit being configured to perform a heat exchange with a gas in the process chamber
Implementation Method 3
a second heat exchange unit provided in the process chamber, the second heat exchange unit being horizontally spaced apart from the first heat exchange unit with a gap therebetween and being configured to perform a heat exchange with the gas in the process chamber
Data Source
AI summary
A substrate processing apparatus includes: a process chamber having an object to be heated therein and configured to process a plurality of substrates; a substrate holder configured to hold the substrates with an interval therebetween in a vertical direction in the process chamber; a first heat exchange unit supporting the substrate holder from a lower side thereof in the process chamber and configured to perform a heat exchange with a gas in the process chamber; a second heat exchange unit provided in the process chamber, the second heat exchange unit being horizontally spaced apart from the first heat exchange unit with a gap therebetween and being configured to perform a heat exchange with the gas in the process chamber; and an induction heating unit configured to subject the object to be heated to an induction heating from an outer side of the object to be heated.


