Substrate Processing Apparatus Inner Lid Pressure Control

The gas supply part is divided into multiple gas injection parts, each with multiple injection holes distributed across different regions. This segmentation allows gas to be supplied uniformly from multiple locations simultaneously, maintaining injection uniformity even in a minimized processing space volume.

Different regions of the substrate are targeted with gas injection from optimally positioned holes. The gas injection holes are strategically located to ensure each region receives appropriate gas flow, creating local quality variations that achieve overall uniformity despite the compact space.

The temperature control system is segmented into multiple heating regions corresponding to different areas of the substrate. Each heating region can be independently controlled, allowing precise temperature management even in the minimized processing space where thermal gradients are more pronounced.

Temperature sensors are positioned to detect substrate temperature in real-time, providing feedback to the heating system. This feedback mechanism allows the system to compensate for rapid temperature changes during pressure transitions, maintaining stable substrate temperature despite the compact space constraints.

The pressure control system is segmented into multiple stages with intermediate pressure levels. Rather than transitioning directly between extreme pressure values, the system uses stepped pressure changes through intermediate states, reducing the mechanical stress burden on the gate valve while maintaining the ability to achieve a wide overall pressure range.

The system prepares for pressure transitions by gradually building pressure differential before opening or closing the gate valve. This cushioning approach prevents sudden pressure shocks that would otherwise damage the gate valve, enabling reliable operation across a wide pressure range.