Substrate Processing Apparatus for Low-Temperature Insulating Film Formation
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Solution Overview
Problem
In semiconductor device manufacturing, existing methods for forming insulating films like silicon oxide and silicon nitride films face challenges in maintaining performance levels, especially during low-temperature processing, where film quality can be compromised, and new film development is hindered by cost and process integration issues.
Innovation Solution
A technique involving a cycle of forming layers with specific gas supplies to modify the film composition, where a first layer is formed with a first element, a second layer is formed by adding a second element, and a third layer is formed by introducing a third element under conditions that control the modifying reaction to achieve a desired composition ratio, allowing for the formation of films like silicon nitride, silicon carbonitride, and silicon boron carbonitride with non-stoichiometric compositions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional CVD or ALD methods are used to form insulating films, then the films can be formed with standard properties, but the film quality degrades during low-temperature processing and performance requirements cannot be met
Solution Approach 1:
The patent applies parameter changes by controlling the composition ratio of elements (Si, N, C, B) in the film during deposition. By adjusting the non-stoichiometric composition, particularly the carbon content, the film properties are modified to achieve desired performance at low processing temperatures. The composition ratio is controlled as a key parameter to compensate for the effects of low-temperature processing.
Solution Approach 2:
The patent forms composite insulating films containing multiple elements (silicon, nitrogen, carbon, and boron) in specific combinations. These composite materials, such as silicon carbonitride and silicon boron carbonitride films, exhibit improved properties that enable low-temperature processing while maintaining or enhancing film quality and device performance.
2Reliability
If new kinds of films are developed to ensure device performance, then performance requirements can be met, but costs increase and process integration becomes more difficult
Solution Approach 1:
The patent modifies conventional insulating film formation processes to achieve multiple objectives simultaneously. The same deposition process can form films with different composition ratios to meet various performance requirements (insulation, stress control, dielectric constant) without requiring entirely new film materials or processes, thus maintaining process integration simplicity.
Solution Approach 2:
Instead of developing new film materials, the patent achieves improved device performance by changing the composition parameters of existing film systems. By controlling the ratios of Si, N, C, and B elements, the film properties are tuned to meet performance requirements while using established deposition processes, avoiding the complexities of new material integration.
3Manufacturing precision
If the composition ratio of elements in the film is controlled to achieve desired properties, then film quality and performance are improved, but the process complexity increases due to multiple gas supply steps
Solution Approach 1:
The patent combines multiple element deposition steps into a unified cyclic process. The first, second, and third elements are deposited in sequence within each cycle, and the cycle is repeated to build up the film with controlled composition. This merging of steps into a standardized cycle reduces overall process complexity compared to separate deposition processes for each element.
Solution Approach 2:
The patent employs periodic action through cyclic repetition of the deposition sequence. Each cycle deposits a controlled amount of first, second, and third elements, and repeating the cycle builds the film with precise composition control. This periodic approach simplifies the process by using the same sequence repeatedly rather than requiring unique steps for each portion of the film.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the quality and performance of insulating films by controlling the composition ratio, improving film properties such as insulation and stress control, while being adaptable to various semiconductor device requirements.
Implementation Method 1
a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) is used
Data Source
AI summary
Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.