Substrate Processing Device Non-Uniform Impedance Plasma Control
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Solution Overview
Problem
Existing substrate processing devices often experience non-uniform plasma density distribution due to the lack of control over plasma generation, leading to variations in plasma density across different locations, which can result in uneven film thickness during processes like film formation, etching, or film modification.
Innovation Solution
A substrate processing device is designed with an annular distribution ring and multiple connection plates with non-uniform impedances, where high-frequency power is supplied to the shower plate through these plates, allowing for controlled plasma density distribution by adjusting the inductance and capacitance of the connection plates, thereby ensuring uniform plasma generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high frequency power is supplied to the shower plate at multiple points, then plasma generation is enhanced, but plasma density becomes non-uniform across different locations
Solution Approach 1:
The connection plates are designed with different inductance values (L1, L2, L3, L4) to create local variations in electrical characteristics. This allows each region of the shower plate to receive appropriately tuned power, compensating for positional differences and achieving uniform plasma density across the substrate surface.
Solution Approach 2:
The patent changes the electrical parameters (inductance values) of the connection plates to optimize plasma distribution. By adjusting the inductance parameter of each connection plate, the system achieves uniform plasma density while maintaining high frequency power supply at multiple points.
2Manufacturing precision
If connection plates with non-uniform impedances are used, then plasma density uniformity is improved, but device complexity increases
Solution Approach 1:
The power distribution system is segmented into multiple connection plates (first, second, third, fourth connection plates) with different inductance values. This segmentation allows independent optimization of each plate's electrical characteristics to achieve overall uniform plasma distribution.
Solution Approach 2:
The connection plates are designed with asymmetric inductance values rather than uniform values. The first connection plate has inductance L1, the second has L2, the third has L3, and the fourth has L4, where these values are deliberately made different to compensate for positional variations and achieve symmetric uniform plasma distribution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively controls and uniformizes plasma density across the substrate processing area, resulting in films with consistent thickness and improved processing outcomes by optimizing the distribution of plasma density through the use of non-uniform impedances and capacitive elements.
Implementation Method 1
high frequency power is supplied to the shower plate through these plates, allowing for controlled plasma density distribution by adjusting the inductance and capacitance of the connection plates
Implementation Method 2
Gas supplied between a shower plate and a stage may be sometimes plasmatized by supplying a high frequency power to the shower plate at multiple points
Data Source
AI summary
Examples of a substrate processing device include an annular distribution ring, a plurality of connection plates continued to the distribution ring and having non-uniform impedances, a shower plate electrically connected to the plurality of connection plates, and a stage provided below the shower plate so as to face the shower plate.