Substrate Processing Apparatus for Oxide Film Removal
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Solution Overview
Problem
Current substrate processing methods for removing oxide films in semiconductor manufacturing are inefficient due to the need for separate processing chambers and increased wafer transfer times, which decrease productivity and require lengthy temperature changes.
Innovation Solution
A substrate processing method and apparatus that uses a halogen element-containing gas and a basic gas to transform the oxide film into a reaction by-product, which is then sublimated and removed by switching to an inert gas, repeating this process multiple times within the same chamber at a controlled temperature and depressurized atmosphere.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate chemical reaction processing chamber and heat treatment chamber are used for oxide film removal, then the oxide film can be removed through COR process and PHT process, but the number of processing chambers increases and wafer transfer time increases, decreasing productivity
Solution Approach 1:
The patent combines the chemical reaction processing chamber and heat treatment chamber into a single integrated processing chamber. This allows the COR process and PHT process to be performed sequentially in the same chamber without requiring physical transfer of the wafer between chambers, thereby eliminating transfer time and improving productivity while maintaining the effectiveness of oxide film removal
Solution Approach 2:
The patent employs periodic switching between different gas supplies within the same processing chamber to alternate between the COR process (using reactive gases) and the PHT process (using inert gases with heating). This periodic action enables both processes to be performed in sequence without chamber changes, resolving the contradiction between maintaining process effectiveness and improving throughput
2Reliability
If temperature of wafer is increased from low temperature to predetermined level for PHT process, then by-product can be removed by evaporation or sublimation, but time for changing temperature is required, making it difficult to improve productivity
Solution Approach 1:
The patent performs the chemical reaction process at low temperature first to generate the by-product, then immediately transitions to the heat treatment process by switching gas supply and activating heating. The temperature change is initiated without interrupting the process flow, and the system is designed to rapidly achieve the target temperature, minimizing the time loss while ensuring complete by-product removal through evaporation or sublimation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces processing time and improves throughput by eliminating the need for separate chambers and minimizing temperature changes, thereby enhancing productivity and efficiency in oxide film removal.
Implementation Method 1
transforming the oxide film into a reaction by-product by supplying a halogen element-containing gas and a basic gas to the substrate
Implementation Method 2
sublimating the reaction by-product to remove the reaction by-product from the substrate
Implementation Method 3
a gas exhaust unit configured to exhaust the chamber
Data Source
AI summary
There is provided a substrate processing method for removing an oxide film formed on a surface of a substrate. The method includes (a) transforming the oxide film into a reaction by-product by supplying a halogen element-containing gas and a basic gas to the substrate accommodated in a processing chamber; and (b) sublimating the reaction by-product to remove the reaction by-product from the substrate by stopping the supply of the halogen element-containing gas into the processing chamber and supplying an inert gas into the processing chamber. The steps (a) and (b) are repeated a plurality of times.