Substrate Processing Method for High Aspect Ratio Pattern Deformation

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Solution Overview

Problem

In semiconductor device manufacturing, high aspect ratio patterns on substrates often experience deformation due to surface tension during liquid processing, which is difficult to fully suppress, leading to convex portions contacting each other and causing manufacturing yield issues.

Innovation Solution

A substrate processing method involving a liquid processing process, a drying process, and a separating process using an etching gas to separate sticking portions between convex portions, followed by thermal processing to restore the pattern to its original state, utilizing a mixture of ammonia and hydrogen fluoride gases for effective etching.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a drying process is performed after liquid processing to remove processing liquid from the substrate, then the substrate is dried and manufacturing productivity is improved, but surface tension of the liquid causes convex portions to deform and contact each other

Engineering Contradiction:
Improvedrying efficiencyVSAvoidpattern shape accuracy
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies preliminary anti-action by performing a hydrophobization treatment on the convex portions before the drying process. This treatment creates a water-repellent surface that prevents the processing liquid from adhering to the convex portions, thereby counteracting the surface tension effects that would otherwise cause deformation during drying. The hydrophobization is done in advance to prevent the harmful effect rather than correcting it after occurrence.

Inventive Principle:
Principle #9Preliminary anti-action

Solution Approach 2:

The patent changes the surface property parameter of the convex portions by applying a hydrophobization treatment. This modifies the surface energy and wettability characteristics, transforming the surface from hydrophilic to hydrophobic. This parameter change prevents liquid adhesion and eliminates the surface tension-induced deformation problem during subsequent drying.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If IPA replacement is performed before drying to reduce surface tension, then deformation is suppressed, but thorough suppression of convex portion deformation is difficult to achieve

Engineering Contradiction:
Improvedeformation suppressionVSAvoiddeformation prevention reliability
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

Instead of relying on IPA replacement to change the liquid properties, the patent changes the surface property parameter of the convex portions through hydrophobization. This fundamental parameter change of the surface makes it inherently resistant to liquid adhesion regardless of the liquid's surface tension, providing more reliable deformation suppression.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The hydrophobization treatment enables the convex portions to self-protect against liquid adhesion and deformation. The treated surface automatically repels processing liquids without requiring additional measures or precise control of liquid replacement processes, providing reliable and consistent deformation prevention.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively separates and restores deformed convex portions, improving the manufacturing yield of semiconductor devices by addressing the deformation issue caused by surface tension during liquid processing.

Implementation Method 1

a separating process of separating a sticking portion between adjacent ones of the convex portions after the drying process

Methodology Applied
Scientific EffectChemical etching: Chemical Beam Epitaxy

Implementation Method 2

thermal processing to restore the pattern to its original state

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Implementation Method 3

restoring a deformed convex portion of a pattern

Methodology Applied
Scientific EffectElastic recovery: Elastic Recovery

Implementation Method 4

utilizing a mixture of ammonia and hydrogen fluoride gases for effective etching

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Data Source

PatentUS9953840B2Substrate processing method and substrate processing system
Publication Date: 2018.04.24 TOKYO ELECTRON LTD
  • US9953840B2 patent drawing
  • US9953840B2 patent drawing
  • US9953840B2 patent drawing

AI summary

A substrate processing method according to the present disclosure includes: a liquid processing process of supplying a processing liquid to a substrate having a surface on which a pattern having a plurality of convex portions is formed; a drying process of removing the processing liquid existing on the surface of the substrate dry the substrate, and a separating process of separating a sticking portion between adjacent ones of the convex portions after the drying process.