Substrate Processing Apparatus Peroxosulfuric Acid Resist Removal
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Solution Overview
Problem
The existing methods for removing resist from substrates, especially after high-dose ion implantation, are inefficient due to resist hardening and the inability to reuse processing solutions, particularly the sulfuric acid/hydrogen peroxide mixture used in single substrate processes.
Innovation Solution
A substrate processing apparatus and method that generates peroxosulfuric acid using sulfuric acid and mixes it with high-temperature, high-concentration sulfuric acid to create a processing solution with strong oxidative power, effectively removing hardened resist layers and allowing for solution recycling by eliminating the hydrogen peroxide component.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If sulfuric acid and hydrogen peroxide are mixed to create SPM for resist removal, then the resist can be removed from the substrate, but the processing solution cannot be reused and waste treatment becomes difficult
Solution Approach 1:
The invention extracts and removes the hydrogen peroxide component from the processing solution after resist removal. By separating the hydrogen peroxide from the sulfuric acid, the sulfuric acid can be reused while the hydrogen peroxide is disposed of or regenerated, thus resolving the contradiction between effective resist removal and solution reusability
Solution Approach 2:
The invention discards the hydrogen peroxide component and recovers the sulfuric acid for reuse. The processing solution is treated to separate and remove hydrogen peroxide, allowing the sulfuric acid to be recovered and reused in subsequent resist removal processes, eliminating waste treatment difficulties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus successfully removes resist from substrates with modified surfaces using the strong oxidative power of peroxydisulfuric acid, even after high-dose ion implantation, and enables the reuse of the processing solution, simplifying waste treatment.
Implementation Method 1
sulfuric acid and hydrogen peroxide solution are supplied to the mixing valve, and by these mixing and reacting, the SPM containing a component with an oxidative power, such as peroxomonosulfuric acid (Caro's acid), etc., is produced
Implementation Method 2
The SPM supplied to the nozzle from the mixing valve rises in temperature due to a heat of reaction of the sulfuric acid and the hydrogen peroxide solution while flowing through the piping
Implementation Method 3
The SPM supplied to the wafer top surface receives a centrifugal force due to rotation of the wafer, flows along the wafer top surface from the central portion to a peripheral edge, and is speedily distributed across an entirety of the wafer top surface
Implementation Method 4
The resist formed on the wafer top surface is peeled and removed from the wafer top surface by the oxidative power of the SPM
Data Source
AI summary
A substrate processing apparatus and a substrate processing method, with which a resist can be removed satisfactorily from the substrate and a processing solution used for removing the resist can be recycled, are provided. The substrate processing apparatus includes: a substrate holding means holding a substrate; a peroxosulfuric acid generating means generating a peroxosulfuric acid using sulfuric acid; a mixing means mixing the peroxosulfuric acid generated by the peroxosulfuric acid generating means and sulfuric acid of higher temperature and higher concentration than the sulfuric acid used in the peroxosulfuric acid generating means; and a discharging means discharging, toward the substrate held by the substrate holding means, the mixed solution of the peroxosulfuric acid and the sulfuric acid mixed by the mixing means as a processing solution for removing a resist from the substrate.