Substrate Processing Apparatus with Independent Purge Gas Control
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Solution Overview
Problem
In semiconductor manufacturing, the miniaturization of circuit patterns poses challenges in achieving uniform film thickness and preventing voids in narrow spaces, particularly when using molecular layer deposition (MLD) or chemical vapor deposition (CVD) methods, leading to defects during etching and metallization processes.
Innovation Solution
A substrate processing method involving a rotary table in a vacuum chamber with independent control of purge gas flow rates to manage etching distribution, allowing for simultaneous film formation, modification, and etching within the same processing chamber, reducing void formation and improving throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If MLD or ALD method is used to form films in miniaturized circuit patterns, then film thickness controllability and uniformity are improved, but film embedding in narrow spaces with high aspect ratio becomes difficult
Solution Approach 1:
The patent segments the film formation process into multiple cycles of thin film deposition followed by etch back. Instead of attempting to form a complete film in one step, the process divides the film formation into sequential stages, allowing better control over film embedding in narrow spaces while maintaining thickness uniformity.
Solution Approach 2:
The patent employs periodic repetition of film formation and etch back cycles. By repeatedly forming thin films and selectively removing overhanging portions through etch back, the process achieves complete film embedding in narrow spaces while maintaining uniform thickness, resolving the contradiction between precision and manufacturability.
2Reliability
If etch back process is repeatedly performed to remove overhanging portions, then void formation is prevented, but processing time increases due to substrate transport between apparatuses
Solution Approach 1:
The patent merges the film formation apparatus and etch back apparatus into a single integrated system. By combining these previously separate processes into one apparatus, the substrate remains in the same chamber throughout, eliminating transport time and stabilizing process conditions while maintaining void prevention through repeated etch back cycles.
Solution Approach 2:
The patent enables continuous processing by eliminating substrate transport between separate apparatuses. The substrate remains in the vacuum chamber throughout the entire process of film formation and etch back, maintaining continuous useful action and significantly improving productivity while preserving reliability.
3Manufacturing precision
If multiple gas supply units are used for film formation and etching, then process control is improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by providing different gas supply units at different locations within the chamber. The first gas supply unit supplies film formation gas to specific regions, while the second gas supply unit supplies etching gas to other regions, allowing precise control over etching amount distribution without requiring complex centralized control systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively controls etching amount distribution on the substrate surface, enhancing etching uniformity and preventing voids in concave patterns, thereby improving the quality of semiconductor films and increasing processing efficiency.
Implementation Method 1
supplying a first reaction gas to a substrate to cause adsorption of the first reaction gas to the surface of the substrate
Implementation Method 2
supplying a second reaction gas to the substrate to cause a reaction between the first reaction gas that is adsorbed on the surface of the substrate and the second reaction gas
Implementation Method 3
supplying an etching gas while rotating the rotary table to etch a film formed on a surface of the substrate
Data Source
AI summary
A substrate processing method includes an etching step of mounting a substrate on a surface of a rotatory table arranged in a vacuum chamber and supplying an etching gas into the vacuum chamber while rotating the rotary table to etch a film formed on a surface of the substrate. The etching step includes supplying the etching gas to the surface of the rotary table and supplying a purge gas from a plurality of purge gas supply units that are provided near a region where the etching gas is supplied, and controlling an etching amount of etching the film by independently varying a flow rate of the purge gas that is supplied from each of the plurality of purge gas supply units.