Substrate Processing Apparatus Purge Timing for Film Quality
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Solution Overview
Problem
Existing semiconductor device manufacturing processes face challenges in improving the quality of films formed on substrates beyond a certain level, despite precise control of process gas supply conditions, and require optimized purge processing to enhance film properties like etching resistance and uniformity without impairing productivity.
Innovation Solution
A technique involving a cycle of supplying and removing specific gas precursors and reactants in a substrate processing apparatus, where the time periods for removing each gas are set differently based on the type of gas, including a longer time for precursor removal to enhance purge efficiency and reduce impurities, thereby improving film quality and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the purge time for precursor is increased to improve film quality and reduce impurities, then the film uniformity and etching resistance improve, but the processing cycle time increases
Solution Approach 1:
The patent applies dynamic adjustment of purge times for different gases in the cyclic processing method. Specifically, the precursor purge time is set longer than the reactant purge time, creating a dynamic, differentiated timing scheme that optimizes film quality while managing cycle time. This is expressed in the patent as setting the precursor removal time period to be longer than the first reactant removal time period and/or the second reactant removal time period.
Solution Approach 2:
The patent changes the time parameter for precursor removal compared to reactant removal. By setting different time periods for removing different gases (precursor vs. reactants), the patent optimizes the balance between film quality and processing efficiency. This parameter differentiation allows sufficient purge time for precursor while maintaining overall cycle time efficiency.
2Reliability
If the purge time for precursor is increased to reduce impurities, then the etching resistance improves, but the productivity decreases
Solution Approach 1:
The patent implements dynamic, differentiated purge timing where the precursor purge time is specifically extended compared to reactant purge times. This dynamic approach ensures sufficient time for removing precursor impurities that affect etching resistance, while the overall cyclic structure maintains productivity by efficiently managing reactant removal times.
Solution Approach 2:
The patent applies parameter changes by setting the precursor removal time period longer than reactant removal time periods. This selective parameter adjustment targets the specific need for thorough precursor purging to achieve desired etching resistance without uniformly extending all processing times, thus preserving productivity.
3Manufacturing precision
If different time periods are set for removing different gases, then the film quality and impurity control improve, but the process complexity increases
Solution Approach 1:
The patent segments the purge process into distinct time periods for different gases. The precursor removal is divided into a separate, longer time period compared to reactant removal time periods. This segmentation allows precise control over each gas removal phase, improving film quality through targeted purging while maintaining clear process structure.
Solution Approach 2:
The patent applies parameter changes by assigning different time period values to different gas removal operations. The precursor removal time period is set longer than reactant removal time periods, creating a differentiated parameter scheme that improves film quality control without requiring complex equipment modifications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in high-quality films with enhanced etching resistance and insulating properties while maintaining productivity by effectively managing impurity levels and uniformity across the substrate.
Implementation Method 1
forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor containing a predetermined element to the substrate in a process chamber; supplying a first reactant containing nitrogen, carbon and hydrogen to the substrate in the process chamber; supplying a second reactant containing oxygen to the substrate in the process chamber
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor containing a predetermined element to the substrate in a process chamber, removing the precursor from the process chamber, supplying a first reactant containing nitrogen, carbon and hydrogen to the substrate, removing the first reactant from the process chamber, supplying a second reactant containing oxygen to the substrate, and removing the second reactant from the process chamber. A time period of the act of removing the precursor is set to be longer than a time period of the act of removing the first reactant, or a time period of the act of removing the second reactant is set to be longer than the time period of the act of removing the first reactant.