Substrate Processing Apparatus for Low-Temperature SiO2 Film Formation
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Solution Overview
Problem
Conventional methods for forming SiO2 insulation films at low temperatures result in high impurity concentrations of carbon, hydrogen, nitrogen, and chlorine due to the use of organic or inorganic source gases, degrading the film quality in semiconductor devices.
Innovation Solution
A method involving the alternation of forming an element-containing layer on a substrate by supplying source and oxygen-containing gases under reduced pressure, with hydrogen-containing gases, to generate oxidizing species and oxidize the layer, thereby forming high-quality SiO2 films with low impurity concentrations at temperatures between 400°C and 700°C.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If an organic source gas is used to form SiO2 insulation film at low temperature, then the forming temperature is reduced, but carbon, hydrogen, and nitrogen impurities remain in the film
Solution Approach 1:
The patent extracts and removes harmful impurity elements (carbon, hydrogen, nitrogen, chlorine) from the film formation process by carefully selecting source gases that do not contain these elements, thereby achieving low-temperature deposition without compromising film quality
Solution Approach 2:
The patent changes the chemical composition parameters of the source gas from organic compounds containing C-H-N bonds to inorganic compounds (silane and chlorine-containing gases), fundamentally altering the deposition chemistry to eliminate impurity incorporation while maintaining low forming temperatures
2Temperature
If an inorganic source gas is used to form SiO2 insulation film at low temperature, then the forming temperature is reduced, but hydrogen and chlorine impurities remain in the film
Solution Approach 1:
The patent removes harmful hydrogen and chlorine impurities by using a two-step deposition process where silane provides silicon without hydrogen incorporation and chlorine-containing gases provide oxygen without chlorine retention in the final film
Solution Approach 2:
The patent changes the source gas composition parameters by using silane (SiH4) followed by chlorine-containing gases (SF6, CF4, CCl4), controlling the chemical reactions to deposit pure SiO2 while eliminating hydrogen and chlorine from the film structure through proper process sequencing
3Ease of manufacture
If conventional CVD method is used to form SiO2 insulation film, then the process is simple, but impurity concentration is high and film quality is degraded
Solution Approach 1:
The patent segments the conventional single-step CVD process into two distinct deposition steps: first depositing a silicon-containing layer from silane, then oxidizing it to SiO2 using chlorine-containing gases, thereby achieving impurity-free film formation while maintaining process simplicity
Solution Approach 2:
The patent maintains continuous useful action by performing in-situ deposition without breaking vacuum, transitioning directly from silicon layer formation to oxidation step, eliminating contamination risks while achieving low impurity concentration through controlled chemistry
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces impurity concentrations and improves film-forming rate and uniformity, resulting in high-quality SiO2 films with excellent within-film impurity profiles, outperforming conventional CVD methods.
Implementation Method 1
reacting the oxygen-containing gas with the hydrogen-containing gas to generate oxidizing species containing oxygen, and oxidizing the element-containing layer by the oxidizing species
Implementation Method 2
forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate
Data Source
AI summary
A substrate processing apparatus capable of forming an oxide film on a substrate by forming a layer on the substrate by supplying a source gas into a process vessel accommodating the substrate via the first nozzle, and simultaneously supplying an oxygen-containing gas through a second nozzle and a hydrogen-containing gas through a first nozzle into the process vessel having an inside pressure thereof lower than atmospheric pressure; mixing and reacting the oxygen-containing gas with the hydrogen-containing gas in a non-plasma atmosphere within the process vessel to generate atomic oxygen; and oxidizing the layer with the atomic oxygen to change the layer into an oxide layer is disclosed.