Substrate Processing Solution for Titanium Film Removal Without Pattern Damage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing processing solutions struggle to efficiently remove titanium-based protective films while minimizing damage to patterns during the semiconductor manufacturing process.
Innovation Solution
A processing solution comprising an oxidizing agent and hexafluorosilicic acid, with a specific molar ratio of Si atoms in hexafluorosilicic acid to the oxidizing agent, which effectively removes titanium-based protective films and suppresses pattern damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If hydrogen fluoride-based processing solutions are used to remove titanium-based protective films, then the protective film removal efficiency is improved, but the damage to patterns increases
Solution Approach 1:
The invention changes the chemical composition parameters of the processing solution by replacing hydrogen fluoride with hexafluorosilicic acid as the main component and adding specific oxidizing agents (iodic acid, periodic acid, or sodium percarbonate). This parameter change enables effective removal of titanium-based protective films while reducing pattern damage, as the new chemical composition provides selective etching capability with milder action on surrounding patterns.
2Object-affected harmful factors
If milder chemicals are used to suppress pattern damage, then the damage to patterns is reduced, but the protective film removal efficiency decreases
Solution Approach 1:
The invention creates a composite chemical system by combining hexafluorosilicic acid (milder chemical) with specific oxidizing agents (iodic acid, periodic acid, or sodium percarbonate). This composite formulation achieves synergistic effects where the oxidizing agents enhance the etching capability on titanium-based films while the hexafluorosilicic acid provides selective action that spares surrounding patterns, thus resolving the contradiction between mildness and effectiveness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution efficiently removes titanium-based protective films and suppresses damage to patterns, even when using milder chemicals compared to hydrogen fluoride-based solutions, thereby improving the yield and electrical characteristics of semiconductor substrates.
Implementation Method 1
a processing solution containing an oxidizing agent (A) and hexafluorosilicic acid (B)
Implementation Method 2
hexafluorosilicic acid (B), in which a molar ratio of a Si atom of the hexafluorosilicic acid (B) to the content of the oxidizing agent (A) is from 8 to 1900
Data Source
AI summary
There are provided a processing solution, including: an oxidizing agent (A), and hexafluorosilicic acid (B), in which a molar ratio of the content of the hexafluorosilicic acid (B) to the content of the oxidizing agent (A) is from 8 to 1900; a method for processing a substrate; and a method for manufacturing a semiconductor substrate.