Substrate Processing Apparatus for Uniform Film Deposition
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Solution Overview
Problem
In semiconductor manufacturing, turntable type film deposition apparatuses face challenges in achieving uniform film deposition due to the 'loading effect,' where film deposition varies with the surface area of patterns on the wafer, and existing methods struggle to maintain desired film quality while minimizing apparatus costs and productivity.
Innovation Solution
A substrate processing apparatus with a vacuum chamber, a turntable, and multiple gas supply units for process gases, plasma processing gases, and separation gases, arranged in a rotational direction, where the substrate passes through areas with varying plasma treatment conditions to control ion energy and radical concentration, preventing the loading effect and ensuring desired film quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single plasma processing gas supply unit is used, then the apparatus structure is simple, but the film deposition uniformity deteriorates due to loading effect
Solution Approach 1:
The single plasma processing gas supply unit is divided into multiple separate units (first plasma processing gas supply unit and second plasma processing gas supply unit), each supplying different plasma processing gases. This segmentation allows different regions of the substrate to receive plasma with different characteristics, thereby achieving uniform film deposition across the entire substrate surface while preventing the loading effect.
Solution Approach 2:
Different plasma processing gases are supplied to different regions of the substrate through the segmented supply units. The first plasma processing gas supply unit supplies plasma processing gas to a first region, while the second plasma processing gas supply unit supplies plasma processing gas to a second region. This local quality approach ensures that each region receives plasma conditions optimized for its specific requirements, achieving overall film uniformity.
2Manufacturing precision
If multiple plasma processing gas supply units are used, then film deposition uniformity is improved, but the apparatus complexity increases
Solution Approach 1:
The multiple plasma processing gas supply units are designed to work within a unified ALD process framework, where each unit performs a specific function but all units contribute to the same overall goal of uniform film deposition. The first and second plasma processing gas supply units are integrated into the same vacuum chamber and substrate processing system, allowing them to perform complementary functions that together achieve the desired film uniformity without requiring entirely separate processing systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents the loading effect and achieves uniform thin film deposition with desired quality by passing the substrate through areas with low and high ion energy and radical concentrations, enhancing film uniformity and productivity while reducing apparatus costs.
Implementation Method 1
a process gas supply unit configured to supply a process gas that adsorbs on a surface of the substrate
Implementation Method 2
a first plasma generation unit configured to convert the first plasma processing gas to first plasma, and a second plasma generation unit configured to convert the second plasma processing gas to second plasma
Data Source
AI summary
A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.