Substrate Chamber Purge Layout for Low-Oxygen Baking Transfer
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in maintaining low oxygen saturation during baking processes, which can affect the quality of semiconductor devices.
Innovation Solution
Incorporating a gas supply unit to provide inert gas in both the heat treatment and cooling chambers, along with a cover to seal these chambers, and using purge gas supply units to maintain low oxygen saturation by injecting inert gases like nitrogen through dedicated ports and injection holes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the substrate is transferred between chambers through open ports, then the substrate can be moved for processing, but oxygen from the external environment enters the chambers increasing oxygen saturation
Solution Approach 1:
The purge gas supply units are activated before substrate transfer begins and continue during the transfer process. This preliminary action of supplying inert gas creates a protective atmosphere in advance, preventing oxygen from entering the chambers when ports are opened, thus maintaining low oxygen saturation while enabling efficient substrate transfer.
Solution Approach 2:
The patent introduces purge gas supply units that provide inert gas (such as nitrogen) to the heat treatment and cooling chambers. This creates an inert atmosphere that displaces oxygen, allowing substrate transfer through open ports without increasing oxygen saturation, thus resolving the contradiction between transfer efficiency and oxygen control.
2Object-affected harmful factors
If purge gas is supplied continuously, then oxygen saturation is maintained at low levels, but gas consumption and system complexity increase
Solution Approach 1:
The purge gas supply system is segmented into separate supply units for the heat treatment chamber and cooling chamber, each with its own purge gas supply unit. This segmentation allows independent control of gas supply in each chamber, maintaining low oxygen saturation where needed while reducing overall system complexity and gas consumption compared to a continuous system-wide supply.
Solution Approach 2:
The purge gas supply operates periodically rather than continuously - it is activated when carry-in/out ports are opened or during substrate transfer operations, and can be reduced or stopped when chambers are sealed. This periodic action maintains oxygen saturation control while reducing gas consumption and simplifying system operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Maintains low oxygen saturation in the baking process, ensuring the quality and integrity of semiconductor substrates by preventing oxygen introduction during substrate transfer and treatment.
Implementation Method 1
a first purge gas supply unit arranged in an inner wall of the housing and providing a first purge gas to the cooling treatment space
Implementation Method 2
a gas supply unit arranged in one side wall inside the cover and providing an inert gas to the inside of the cover
Data Source
AI summary
A substrate processing apparatus includes a heat treatment chamber providing a heat treatment space for heat-treating a substrate, a cooling chamber arranged apart from the heat treatment chamber in a horizontal direction, and a cover sealing the heat treatment chamber and the cooling chamber, wherein the cooling chamber includes a housing defining a cooling treatment space therein, a cooling plate on which the substrate is placed, a first carry-in/out port arranged in one inner wall of the housing and defining a path through which the substrate is externally carried in/out with respect to the cooling chamber, and a first purge gas supply unit arranged in an inner wall of the housing and providing a first purge gas to the cooling treatment space.