Substrate Recess Hole Alignment via Dummy Recesses

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Reactive ion etching of substrate recesses often results in inclined holes due to uneven plasma sheath deformation, leading to deformation and misalignment of individual flow paths in liquid discharge heads.

Innovation Solution

Forming dummy recesses on both sides of recesses in an array direction, spaced apart by a predetermined distance, to uniformly deform the plasma sheath and maintain perpendicular ion incidence, thereby preventing hole deformation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If reactive ion etching is performed on substrate recesses, then holes are formed in the bottom portions of recesses, but the holes become inclined and deformed due to uneven plasma sheath deformation

Engineering Contradiction:
Improvehole alignmentVSAvoidhole deformation
Core Design Contradiction:
Manufacturing precisionVSShape

Solution Approach 1:

Dummy recesses are formed in advance on both sides of the recess array before performing reactive ion etching. This preliminary structural preparation creates a reference potential that guides uniform plasma sheath deformation during subsequent etching, preventing hole inclination and maintaining manufacturing precision.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The dummy recesses act as an intermediary structure that mediates the plasma sheath deformation. By introducing these additional recesses, the plasma potential distribution is controlled, creating a reference frame that ensures uniform sheath deformation and perpendicular ion incidence on the substrate.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If reactive ion etching is performed on substrate recesses, then holes are formed in the bottom portions of recesses, but the holes become deformed due to non-perpendicular ion incidence

Engineering Contradiction:
Improvehole perpendicularityVSAvoidion incidence angle deviation
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

Dummy recesses are formed in advance on both sides of the recess array before performing reactive ion etching. This preliminary structural preparation creates a reference potential that guides uniform plasma sheath deformation during subsequent etching, preventing hole inclination and maintaining manufacturing precision.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The dummy recesses act as an intermediary structure that mediates the plasma sheath deformation. By introducing these additional recesses, the plasma potential distribution is controlled, creating a reference frame that ensures uniform sheath deformation and perpendicular ion incidence on the substrate.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method ensures that holes formed in the bottom portions of recesses are resistant to deformation, maintaining their intended alignment and functionality in liquid discharge heads.

Implementation Method 1

a reaction gas is supplied to an area between the lower electrode and an upper electrode, to which a high-frequency power source is connected, from micropores of the upper electrode. As a result, the reaction gas, which has been supplied, is turned into plasma in the area between the upper electrode and the lower electrode

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 2

a substrate is fixed to a lower electrode in a processing chamber by using, for example, an electrostatic chuck

Methodology Applied
Scientific EffectElectrostatic force: Electrostatics

Data Source

PatentUS9333750B2Method of processing substrate
Publication Date: 2016.05.10 CANON KK
  • US9333750B2 patent drawing
  • US9333750B2 patent drawing
  • US9333750B2 patent drawing

AI summary

A method of processing a substrate includes forming holes in bottom portions of a plurality of recesses formed in a substrate to be arranged in an array direction at a predetermined pitch by performing reactive ion etching on the bottom portions of the plurality of recesses. The forming holes in the bottom portions of the plurality of recesses is a process of preparing a substrate in which a dummy recess serving as a dummy is formed on at least one side of the array direction, in which the plurality of recesses that include the bottom portions in which the holes are formed are arranged, such that a recess is formed on both sides of a recess so that the plurality of recesses are formed at the predetermined pitch in the array direction and performing reactive ion etching on the bottom portions of the plurality of recesses of the prepared substrate.