Substrate Recess Filling With Plasma-Formed Voids for Low Capacitance

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Solution Overview

Problem

Conventional flowable material deposition techniques struggle to effectively fill small recesses on substrates while minimizing parasitic capacitance and maintaining mechanical stability, especially as device sizes decrease.

Innovation Solution

A method involving deposition cycles with controlled ratios of deposition and treatment steps, using inert gases and plasma treatment to form voids within the deposited material, adjusting the void size based on the deposition-to-treatment ratio to balance electrical and mechanical properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional flowable material deposition techniques are used to fill recesses, then the recesses can be filled with insulating material, but parasitic capacitance increases and material properties deteriorate as device sizes decrease

Engineering Contradiction:

Improvefill capabilityVSAvoidparasitic capacitance

Core Design Contradiction:

Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The deposited material is formed with controlled porosity containing voids within the material structure. This porous structure reduces the effective dielectric constant of the filled material, thereby reducing parasitic capacitance while maintaining the fill capability for small recesses. The voids are created through plasma treatment that prevents complete material consolidation during deposition cycles.

Inventive Principle:

Principle #31Porous materials

Solution Approach 2:

The deposition process parameters are changed by controlling the ratio of deposition steps to plasma treatment steps. By adjusting these parameters, the material properties are optimized to achieve desired fill capability while controlling parasitic capacitance. The plasma power and treatment duration are specifically tuned to create the right void distribution within the deposited material.

Inventive Principle:

Principle #35Parameter changes

2Quantity of substance

If deposition cycles with high deposition repeat numbers are used, then fill capability improves, but parasitic capacitance increases due to increased material density

Engineering Contradiction:

Improvedeposited material amountVSAvoidparasitic capacitance

Core Design Contradiction:

Quantity of substanceVSObject-generated harmful factors

Solution Approach 1:

The deposition process uses periodic cycles alternating between material deposition steps and plasma treatment steps. This periodic action allows material to be deposited in controlled amounts followed by plasma treatment that creates voids and prevents excessive consolidation. The cycle repeats multiple times to build up sufficient material quantity while the intermittent plasma treatment maintains low parasitic capacitance by controlling material density.

Inventive Principle:

Principle #19Periodic action

3Reliability

If plasma treatment is applied to deposited material, then material quality improves, but void formation increases which may reduce mechanical stability

Engineering Contradiction:

Improvematerial qualityVSAvoidmechanical stability

Core Design Contradiction:

ReliabilityVSStrength

Solution Approach 1:

The plasma treatment parameters are precisely controlled by adjusting plasma power levels and treatment duration relative to deposition step frequency. This parameter optimization creates a balance where sufficient plasma treatment improves material quality and creates beneficial voids for reducing parasitic capacitance, while the treatment intensity is kept below levels that would compromise mechanical stability. The deposition-to-treatment ratio is tuned to ensure adequate material accumulation for structural integrity.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces parasitic capacitance by forming controlled voids, enhancing electrical performance while maintaining mechanical stability and fill capabilities in small recesses.

Implementation Method 1

performing a treatment step comprising forming a plasma in the reaction chamber by applying a plasma power and treating the deposited material

Methodology Applied

Scientific EffectPlasma: Plasma

Implementation Method 2

allowing the deposited material to flow into the recess in the substrate

Methodology Applied

Scientific EffectFlow:

Data Source

PatentUS12381077B2Methods of filling recesses on substrate surfaces and forming voids therein

Publication Date: 2025.08.05 ASM IP HLDG BV

AI summary

A method of filling a recess on a surface of a substrate may comprise performing a deposition cycle on the substrate; allowing the deposited material to flow into the recess; and creating a void within the recess in response to the allowing the deposited material to flow. A void size of the void can be based on a ratio of a deposition repeat number of times that the deposition step is repeated to a treatment repeat number of times that the treatment cycle is repeated. The deposition cycle can comprise: providing an inert gas to the reaction chamber; performing a deposition step; and performing a treatment step. A deposition step can comprise: providing a precursor to the reaction chamber; and/or forming a deposited material from the precursor. A treatment step can comprise forming a plasma in the reaction chamber by applying a plasma power and treating the deposited material.