Semiconductor Substrate Recess Layout for Uneven Warpage Correction
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Solution Overview
Problem
Conventional semiconductor substrate warpage correction methods can only address even warpage, failing to correct uneven warpage, which leads to manufacturing defects and reliability issues.
Innovation Solution
A semiconductor device with a recessed portion layer featuring unevenly arranged recessed portions on the semiconductor substrate, filled with a filling film, which can be inorganic or resin, and varying in density, width, depth, and shape to correct uneven warpage while considering the arrangement of sub-substrates and electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If lattice-shaped slits with uniform width and depth are evenly disposed on the rear surface of the semiconductor substrate, then even warpage can be corrected, but uneven warpage cannot be corrected
Solution Approach 1:
The patent applies local quality by making the recessed portions have different depths, widths, or densities in different regions of the semiconductor substrate. This allows the structure to provide different degrees of stress relief locally, enabling correction of uneven warpage patterns that cannot be addressed by uniform lattice structures.
Solution Approach 2:
The patent introduces asymmetry by configuring recessed portions with non-uniform dimensions, positions, or depths. This asymmetric design allows the structure to counteract asymmetric stress distributions caused by uneven warpage, thereby expanding the correction capability beyond what symmetric uniform patterns can achieve.
2Manufacturing precision
If recessed portions are added to correct warpage, then warpage correction is achieved, but device complexity increases
Solution Approach 1:
The patent segments the warpage correction function into multiple discrete recessed portions distributed across the substrate. Each recessed portion acts as an independent stress relief element, allowing the complex correction task to be divided into simpler, manufacturable features that can be created using standard semiconductor fabrication processes.
Solution Approach 2:
The patent creates a porous-like structure by forming recessed portions filled with resin or voids in the substrate. This porous configuration reduces the overall stiffness locally, enabling warpage correction while maintaining a relatively simple fabrication process similar to existing via or trench formation techniques.
3Ease of manufacture
If uniform lattice-shaped slits are used, then manufacturing is simple, but only even warpage can be corrected
Solution Approach 1:
The patent maintains ease of manufacture by using standard photolithography and etching processes, but enhances correction effectiveness by varying the local properties of recessed portions (depth, width, density) in different regions. This allows the same basic fabrication tools to create a non-uniform structure that addresses complex uneven warpage patterns.
Data Source
AI summary
Uneven warpage in a semiconductor device is corrected. A semiconductor device includes a semiconductor substrate, a recessed portion layer, and a filling film. A semiconductor element is formed on the semiconductor substrate. The recessed portion layer includes recessed portions that have openings in the same surface other than a formation surface of the semiconductor element and that are unevenly arranged. The filling film fills the recessed portions. The recessed portions may be different in at least one of a density, a width, a depth, and a shape in the recessed portion layer according to at least one of a position of a sub-substrate which is mounted on the semiconductor substrate, a wire density of a wire which is formed in the semiconductor substrate, and an arrangement density of a through electrode which is formed in the semiconductor substrate.