Substrate Recess Wetting for Selective Surface Termination Processing
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Solution Overview
Problem
Existing methods struggle to selectively process different surfaces within the recesses of a substrate during semiconductor device manufacturing, particularly in selectively removing and forming films on specific terminations within these recesses.
Innovation Solution
A substrate processing technique involving a substrate exposed to a processing solution containing a liquid that reacts with a first termination and an additive that reduces surface tension, allowing selective removal and subsequent film formation on a second termination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional processing solution is used on substrate recesses, then the liquid can react with terminations on surfaces, but the liquid cannot selectively access and react with only specific terminations due to high surface tension preventing proper wetting
Solution Approach 1:
The patent changes the surface tension parameter of the processing solution by adding surfactants. This allows the liquid to wet and penetrate into recesses effectively, enabling selective access to specific terminations (e.g., Si-H bonds) while maintaining the ability to distinguish between different termination types through chemical reactivity differences
Solution Approach 2:
The patent creates local quality differences by having different terminations (Si-H, Si-CH3, Si-OH) on different surfaces or regions of the substrate. The processing solution is designed to react selectively with specific terminations in specific locations, enabling spatially selective processing of the substrate recesses
2Area of stationary object
If the processing solution penetrates deeply into recesses to access inner surfaces, then selective processing of inner surfaces becomes possible, but the solution also reacts with unwanted terminations reducing selectivity
Solution Approach 1:
The patent adjusts multiple parameters of the processing solution including surface tension (via surfactants), pH, and chemical composition to achieve optimal balance between penetration depth and selectivity. The solution is formulated to penetrate recesses while maintaining selective reactivity toward target terminations
Solution Approach 2:
The processing solution is formulated as a composite containing multiple components: a base liquid (e.g., water or organic solvent), surfactants for surface tension reduction, and specific chemical reagents that react selectively with target terminations. This composite formulation enables both deep penetration and selective reaction
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables selective processing of substrate surfaces within recesses, enhancing the control over film formation and removal processes, thereby improving semiconductor device manufacturing efficiency and quality.
Implementation Method 1
an additive that reduces surface tension of the liquid
Data Source
AI summary
There is provided a technique that includes (a) preparing a substrate including a first surface, which includes a first termination and constitutes at least a portion of an inner surface of a recess, and a second surface, which includes a second termination different from the first termination, and (b) removing the first termination selectively with respect to the second termination by exposing the substrate to a processing solution containing a liquid that reacts with the first termination and an additive that reduces surface tension of the liquid.