Substrate Thin Film Removal Cycles for Temperature Uniformity
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Solution Overview
Problem
During the thin film removal process in semiconductor manufacturing, the repeated process cycles lead to deteriorated surface roughness due to temperature deviations across the substrate, resulting in inconsistent thin film removal rates.
Innovation Solution
A substrate treating method and apparatus that involve a reaction process of transferring an etchant to the thin film, followed by a removal process of partially or fully removing process by-products, with controlled heating and atmospheric exhaustion to minimize temperature deviations and improve surface roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the process cycle is repeatedly performed to remove thin film, then the thin film removal amount increases, but the surface roughness deteriorates due to temperature deviation
Solution Approach 1:
The patent applies periodic action by dividing the continuous thin film removal process into discrete process cycles, each consisting of a reaction process and a removal process. By repeating these standardized cycles, the system achieves controlled thin film removal while managing temperature deviations through periodic interruption and reset of the process conditions.
Solution Approach 2:
The patent utilizes parameter changes by adjusting the exhaust flow rate dynamically during different phases of the process cycle. Specifically, the exhaust flow rate is set to a first value during the reaction process and a second value during the removal process, allowing optimization of both thin film removal efficiency and surface roughness control.
2Productivity
If the exhaust flow rate is increased to remove process by-products, then the removal efficiency improves, but the temperature deviation across the substrate increases
Solution Approach 1:
The patent applies periodic action by implementing distinct phases within each process cycle: a reaction process phase and a removal process phase. During the removal process phase, the exhaust flow rate is increased to efficiently remove process by-products, while during the reaction process phase, the exhaust flow rate is reduced to minimize temperature deviation. This periodic switching allows the system to achieve high removal efficiency without sustained high exhaust rates that would cause temperature uniformity issues.
Solution Approach 2:
The patent utilizes dynamics by making the exhaust flow rate a dynamic parameter that changes throughout the process cycle rather than maintaining a constant value. The exhaust flow rate is adjusted based on the current process phase (reaction or removal), allowing the system to optimize performance metrics at different times during operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method and apparatus efficiently treat substrates by reducing temperature deviations across the substrate, thereby improving the uniformity of thin film removal and enhancing the surface roughness of the thin film.
Implementation Method 1
an etchant such as NH4F, HF, and F* is supplied to SiO2— and Si3N4 thin films to generate a process by-product (NH4)2SiF6
Implementation Method 2
the substrate is heated and a treating space in which the substrate is to be provided is exhausted to remove the process by-product
Implementation Method 3
a treating space in which the substrate is to be provided is exhausted to remove the process by-product
Data Source
AI summary
Provided is a substrate treating method of removing a thin film formed on a substrate. The substrate treating method includes a reaction process of transferring an etchant to the thin film, and a removal process of removing process by-products generated by reacting the thin film with the etchant, in which the reaction process and the removal process are repeated at least twice or more, and any one of the removal processes is to remove partially the process by-products.