Substrate Rinsing Nozzle Dynamics for Meniscus Stability
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Solution Overview
Problem
In semiconductor manufacturing, the rinsing and drying process often results in increased defect counts at the substrate periphery due to meniscus disruption and splashing, which are exacerbated by aggressive processing conditions aimed at increasing throughput.
Innovation Solution
A method involving the controlled use of multiple purge gas nozzles and optimized nozzle positions, combined with simulation and experimental data to maintain an optimum shear stress and air flux, preventing meniscus disruption and splashing, includes the use of scanning arms to adjust nozzle positions and heights, ensuring stable rinsing and drying conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If aggressive processing conditions are used to increase throughput, then productivity is improved, but manufacturing precision deteriorates due to meniscus disruption and splashing
Solution Approach 1:
The patent implements dynamic control of purge gas flow rate and nozzle position during the rinsing process. The purge gas flow rate is adjusted based on the instantaneous position of the meniscus, and the nozzle position is dynamically modified to maintain optimal distance from the meniscus. This dynamic adjustment allows the system to operate at higher speeds without causing meniscus disruption or splashing, thereby resolving the contradiction between productivity and manufacturing precision.
Solution Approach 2:
The system uses real-time feedback from meniscus position detection (via optical sensors or other detection means) to adjust purge gas flow rate and nozzle position. The detected meniscus position is fed back to the control system, which then modifies the processing parameters to prevent meniscus disruption. This feedback mechanism enables high-speed processing while maintaining low defect counts, resolving the technical contradiction between throughput and precision.
2Productivity
If high purge gas flow is used to remove contaminant faster, then productivity is improved, but manufacturing precision deteriorates due to meniscus disruption
Solution Approach 1:
The patent implements dynamic adjustment of purge gas flow rate based on the instantaneous position of the meniscus and the distance between the nozzle and meniscus. When the nozzle is close to the meniscus, the purge gas flow rate is reduced to prevent disruption. When the distance increases, the flow rate can be increased to maintain rinsing efficiency. This dynamic control allows high-speed processing without causing splashing or meniscus disruption, resolving the contradiction between rinsing speed and defect count density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces defect counts while maintaining high process throughput by stabilizing the meniscus and preventing splashing, optimizing shear stress and air flux to ensure efficient rinsing and drying without disrupting the meniscus.
Implementation Method 1
starting a second flow of purge gas from a first purge gas nozzle initially located proximate the center of the substrate, to establish a meniscus of the dispensed rinse liquid on the substrate
Implementation Method 2
moving the first purge gas nozzle horizontally towards the edge of the substrate, so as to radially displace the meniscus and dispensed rinse liquid towards the edge of the substrate
Implementation Method 3
Rinse liquid is dispensed from a nozzle, or plurality of nozzles onto the substrate, the rinse liquid displacing the contaminant that needs to be removed from the substrate
Data Source
AI summary
A method and apparatus are disclosed for optimizing a rinsing and drying process in semiconductor manufacturing. The optimization seeks to maximize processing throughput while maintaining low defect counts and high device yields, and utilizes simulation and experimental data to set the optimal process parameters for the rinsing and drying process. Improved methods of rinse liquid and purge gas nozzle movement are also disclosed.