Substrate Rotation and Gas Supply Synchronization Control
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Solution Overview
Problem
In substrate processing for semiconductor devices, synchronization between gas supply period and rotation period can lead to inconsistent film thickness, contradicting the goal of eliminating distance-related influences through rotation.
Innovation Solution
A substrate processing apparatus with a controller that adjusts the rotation period and gas supply period to ensure they never match, specifically satisfying the equation |mP−nT| > 0, preventing synchronization during alternate gas supply operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas is supplied periodically to form film layer by layer, then the film formation precision is improved, but the complexity of coordinating gas supply period and rotation period increases
Solution Approach 1:
The patent employs feedback control through a controller that monitors and adjusts the relationship between gas supply period T and rotation period P. The controller ensures that these periods do not synchronize by detecting potential synchronization conditions and adjusting one of the periods accordingly, thereby maintaining film formation precision while managing the coordination complexity through automated feedback mechanisms.
2Ease of operation
If the gas supply period T and rotation period P are made equal for simplicity, then the control complexity is reduced, but the film thickness consistency deteriorates due to synchronization
Solution Approach 1:
The patent deliberately changes the parameters T and P to be different values, preventing synchronization between gas supply and substrate rotation. This parameter differentiation, while slightly increasing control complexity, is necessary to maintain film thickness consistency by ensuring that gas is supplied to different locations on the substrate during each rotation cycle.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This adjustment enhances film thickness consistency across the substrate surface, improving uniformity by ensuring gas is dispersed evenly without being supplied to the same point repeatedly, thereby improving the overall film formation process.
Implementation Method 1
a substrate rotating mechanism for rotating the substrate
Implementation Method 2
the gases are allowed to be adsorbed one atomic layer by one atomic layer
Implementation Method 3
a film is formed utilizing surface reaction
Implementation Method 4
a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other
Data Source
AI summary
Disclosed is a substrate processing apparatus, including: a processing chamber for processing a substrate; a substrate rotating mechanism for rotating the substrate; a gas supply unit for supplying gas to the substrate, at least two kinds of gases A and B being alternately supplied a plurality of times to form a desired film on the substrate; and a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other at least while the alternate gas supply is carried out predetermined times.