Insulating Substrate Roughness Layout for Solder Wetting Control

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Solution Overview

Problem

Existing semiconductor devices with insulating substrates face challenges in controlling the spread of wetting of joint materials like solder, especially due to the thinness of the conductive layers, which can affect heat dissipation and insulation properties.

Innovation Solution

The semiconductor device incorporates a first insulating substrate with a first inner conductive layer having a surface with distinct regions of varying surface roughness. The first conductive spacer is joined to the region with lower surface roughness, allowing controlled spread of wetting of the joint material while inhibiting it in the region with higher surface roughness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If a thin conductive layer is used in the insulating substrate, then the heat dissipation property is improved, but the control of wetting spread of joint material becomes difficult

Engineering Contradiction:
Improveheat dissipation propertyVSAvoidcontrol of wetting spread
Core Design Contradiction:
TemperatureVSManufacturing precision

Solution Approach 1:

The conductive layer is divided into different regions with different surface roughness characteristics. The first region has lower surface roughness to promote wetting spread and heat dissipation, while the second region has higher surface roughness to inhibit wetting spread and provide insulation. This local differentiation allows the thin conductive layer to simultaneously achieve good heat dissipation and controlled wetting behavior.

Inventive Principle:
Principle #3Local quality

2Temperature

If the conductive layer is made thinner to improve heat dissipation, then thermal performance is improved, but the insulation property may be compromised

Engineering Contradiction:
Improveheat dissipationVSAvoidinsulation property
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

By creating regions with different surface roughness within the thin conductive layer, the patent achieves both good heat dissipation (in the smoother first region) and maintained insulation properties (in the rougher second region that inhibits excessive wetting spread).

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The conductive layer functions as a composite structure with regions having different surface characteristics, combining the benefits of thermal conduction and electrical insulation within a single thin layer, thereby maintaining both heat dissipation and insulation properties simultaneously.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively controls the spread of wetting of joint materials, maintaining the heat dissipation and insulation properties of the semiconductor device while ensuring strong electrical connections.

Implementation Method 1

The first conductive spacer is joined to the first region of the first inner conductive layer through a first junction layer

Methodology Applied
Scientific EffectWetting: Wetting

Data Source

PatentUS20250062282A1Semiconductor device
Publication Date: 2025.02.20 DENSO CORP
  • US20250062282A1 patent drawing
  • US20250062282A1 patent drawing
  • US20250062282A1 patent drawing

AI summary

A semiconductor device includes a first insulating substrate and a first semiconductor element joined to the first insulating substrate through the first conductive spacer. The first insulating substrate includes a first insulating layer and a first inner conductive layer disposed at a side of the first insulating layer. The first inner conductive layer includes a surface having a first region and a second region. The second region surrounds the first region and has larger surface roughness than the first region. The first conductive spacer is joined to the first region of the first inner conductive layer through a first junction layer.