Substrate Film Formation with Inhibitor-Controlled Surface Selectivity
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Solution Overview
Problem
In semiconductor device manufacturing, selectively growing a film on specific surfaces with different materials is challenging due to difficulties in controlling the selective growth process, particularly with modifying agents used in film formation.
Innovation Solution
A technique involving the formation of an inhibitor layer on a substrate's first surface using a modifying agent, followed by applying a film-forming agent containing a catalyst, where the catalyst's molecular size is tailored to prevent adsorption on the first surface by satisfying specific size relationships with inhibitor molecules, allowing precise film formation on the second surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a modifying agent is used to perform selective growth on a substrate surface, then film formation can be achieved on specific surfaces, but it becomes difficult to selectively grow the film due to interference from the modifying agent
Solution Approach 1:
The patent applies local quality by creating an inhibitor layer with specific molecular characteristics on the first surface that differs from the second surface. The inhibitor molecules are specifically designed with width parameter 'a' that creates inter-molecular gaps selective to catalyst molecule size 'c'. This local modification enables the first surface to have different chemical properties compared to the second surface, allowing selective film formation on the desired surface while preventing film formation on the inhibited surface.
Solution Approach 2:
The patent utilizes parameter changes by controlling the molecular dimensions relationship where catalyst molecule width 'c' is greater than the inter-molecular gap 'b-a' of the inhibitor layer. By adjusting these molecular parameters, the catalyst can selectively pass through gaps in the inhibitor layer on the second surface while being blocked on the first surface. This parameter-based control transforms the modifying agent from a source of interference into a precise selection mechanism.
2Manufacturing precision
If a catalyst with appropriate molecular size is used to pass through inhibitor layer gaps, then precise selective film formation is achieved, but the process complexity increases due to molecular size matching requirements
Solution Approach 1:
The patent applies preliminary action by pre-forming the inhibitor layer on the substrate surface before introducing the catalyst-containing film-forming agent. The inhibitor layer is prepared in advance with controlled molecular width 'a' and spacing characteristics, creating a pre-configured selective barrier. This preliminary preparation simplifies the subsequent film formation process, as the selectivity is already established by the pre-formed inhibitor structure rather than requiring real-time control of catalyst-molecule interactions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables high-precision selective film formation on the desired surface, suppressing unwanted film growth on the first surface and enhancing control over the film growth process, thereby improving the selectivity and controllability of the semiconductor device manufacturing process.
Implementation Method 1
forming an inhibitor layer on a first surface of a substrate having the first surface and a second surface by supplying a modifying agent to the substrate to adsorb inhibitor molecules contained in the modifying agent on the first surface
Implementation Method 2
a width of each of the inhibitor molecules is a, an interval between adsorption sites on the first surface is b, and a width of a catalyst molecule constituting the catalyst is c, where c>b−a is satisfied
Data Source
AI summary
There is provided a technique including forming an inhibitor layer on a first surface of a substrate having the first surface and a second surface by supplying a modifying agent to the substrate to adsorb inhibitor molecules contained in the modifying agent on the first surface, and forming a film on the second surface by supplying a film-forming agent containing a catalyst to the substrate after forming the inhibitor layer on the first surface. A width of each of the inhibitor molecules is a, an interval between adsorption sites on the first surface is b, and a width of a catalyst molecule constituting the catalyst is c, where c>b−a is satisfied when a is smaller than b, and c>xb−a (x is the smallest integer that satisfies a<xb) is satisfied when a is larger than b.