Semiconductor Substrate Gettering via Sessile Dislocations
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Solution Overview
Problem
Metal contamination in semiconductor devices reduces manufacturing yield and reliability by lowering the withstand voltage of the gate insulating film or generating leakage current, even in semiconductor bonded substrates.
Innovation Solution
A semiconductor substrate comprising a first and second semiconductor layer with a sessile dislocation composed of a stacking fault and a dislocation loop, with a density of 1E13/cm³ to 1E18/cm³, which acts as a metal getter to prevent contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a semiconductor bonded substrate is formed using conventional methods, then the substrate structure is established, but metal contamination reduces manufacturing yield and reliability
Solution Approach 1:
The invention introduces controlled defects (sessile dislocations) into the semiconductor layer to convert the harmful effect of metal contamination into a beneficial gettering mechanism. These intentionally created dislocations act as traps that attract and immobilize metal impurities, preventing them from reaching active device regions and thereby improving device reliability despite the presence of contamination sources
Solution Approach 2:
The sessile dislocations serve as intermediary trapping sites between the metal contamination sources and the device active regions. Instead of directly preventing contamination entry, the invention introduces these intermediate structures that capture metal atoms through their strained crystal fields, acting as a buffer zone that protects the device from harmful metal diffusion
2Reliability
If the withstand voltage of the gate insulating film is reduced due to metal contamination, then device performance deteriorates, but adding gettering structures increases device complexity
Solution Approach 1:
The invention applies local quality by creating sessile dislocations at specific locations and densities within the semiconductor layer rather than uniformly throughout. This localized defect engineering allows metal gettering to occur in specific regions while maintaining high crystal quality in device active areas, thereby protecting withstand voltage without requiring complex overall device redesign
Solution Approach 2:
The invention changes the physical parameters of the semiconductor layer by controlling the density and distribution of sessile dislocations. By adjusting these defect parameters during crystal growth or post-processing, the substrate can be optimized to provide adequate metal gettering capacity while maintaining acceptable electrical properties and minimal impact on device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The presence of sessile dislocations effectively gets metals, preventing a decrease in device yield and reliability due to poor voltage resistance or leakage current.
Implementation Method 1
at least one of a first semiconductor layer and a second semiconductor layer has a sessile dislocation composed of a stacking fault and a dislocation loop surrounding the stacking fault, and the density of the sessile dislocation is 1×10^13/cm³ or more... effectively gets metals
Implementation Method 2
sessile dislocation composed of a stacking fault and a dislocation loop surrounding the stacking fault... acts as a metal getter
Data Source
Figure 1~2
Figure 3A~3B
Figure 4
AI summary
Provided is a semiconductor substrate and a method for producing the semiconductor substrate that are resistant to metal contamination by gettering metals that cause metal contamination. A semiconductor substrate comprising a first semiconductor layer and a second semiconductor layer in contact with the first semiconductor layer, wherein at least one of the first semiconductor layer and the second semiconductor layer has a sessile dislocation composed of a stacking fault and a dislocation loop surrounding the stacking fault, and the density of the sessile dislocation is 1E13/cm3 to 1E18/cm3.