Semiconductor Substrate Sidewall Steps for Resin Adhesion
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Solution Overview
Problem
Existing semiconductor devices face challenges in ensuring strong adhesion between the semiconductor substrate and resin, leading to potential peeling issues during sealing.
Innovation Solution
The semiconductor device features a quadrangular semiconductor substrate with step sections on its side surfaces, comprising alternately repeating protruding and recessed portions, which increase surface area and allow resin to act as an anchor, enhancing adhesion. The manufacturing method involves forming cracks along specific crystal planes to create these step sections during wafer division.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional flat side surface is used on the semiconductor substrate, then the manufacturing process is simple, but the adhesion to resin is insufficient and peeling occurs during sealing
Solution Approach 1:
The side surface is segmented into multiple protruding portions and recessed portions along the thickness direction, creating a stepped structure. This segmentation increases the surface area and provides mechanical interlocking with the resin, preventing peeling during sealing operations.
Solution Approach 2:
The invention transitions from a flat two-dimensional side surface to a three-dimensional stepped structure by adding height variations in the thickness direction. This dimensional change creates protruding and recessed portions that provide both increased surface area and mechanical anchoring features for improved resin adhesion.
2Manufacturing precision
If the semiconductor wafer is divided along crystal planes, then the division is clean and precise, but the side surfaces become flat and smooth resulting in poor resin adhesion
Solution Approach 1:
Instead of dividing the wafer along straight crystal planes that produce symmetric flat surfaces, the invention introduces asymmetric stepped structures on the side surfaces. The asymmetric arrangement of protruding and recessed portions maintains precise division while creating surface features that enhance resin adhesion through mechanical interlocking.
3Reliability
If the side surface area is increased to improve adhesion, then resin anchoring is enhanced, but the manufacturing process becomes more complex
Solution Approach 1:
The stepped structure is formed through the wafer division process itself, where cracks are intentionally created and extended to generate the protruding and recessed portions. The manufacturing process serves dual purposes: dividing the wafer and simultaneously creating the adhesion-enhancing surface structure, eliminating the need for separate processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The step sections on the side surfaces of the semiconductor device improve adhesion to resin, reducing peeling and ensuring secure bonding, while the manufacturing method effectively increases surface area for resin anchoring, thereby enhancing the reliability of the semiconductor device.
Implementation Method 1
forming a plurality of cracks by pressing a pressing member against a front surface of the metal layer along a plurality of planned dividing lines
Implementation Method 2
the semiconductor wafer is cleaved on crystal planes starting from the cracks, so that the semiconductor wafer is divided
Data Source
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AI summary
A semiconductor device (10, 100) includes a semiconductor substrate (12) having a quadrangular shape when viewed from above and having a front surface (12a), a rear surface (12b) opposite to the front surface, and four side surfaces (12c) connecting the front surface and the rear surface. Each of the side surfaces has a step section (30) in which a plurality of protruding portions (30a) and a plurality of recessed portions (30b) alternately and repeatedly appear along a direction in which a peripheral edge of the front surface of the semiconductor substrate extends.