Substrate Processing Silicon Concentration Control
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Solution Overview
Problem
The existing substrate processing method involves separate steps for replenishing chemical liquid and adjusting silicon concentration, leading to prolonged replenishment time due to increased number of working steps.
Innovation Solution
A substrate processing method and apparatus that sets a supply flow rate for the chemical liquid based on the replenishment amount and silicon replenishment, simultaneously supplying the chemical liquid and dissolving silicon in the processing liquid to maintain a predetermined silicon concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the dummy substrate is immersed in the processing liquid after replenishing the chemical liquid, then the silicon concentration is adjusted to a predetermined concentration, but the number of working steps increases and the replenishment time is prolonged
Solution Approach 1:
The patent combines two previously separate operations (replenishing chemical liquid and adjusting silicon concentration) into a single integrated operation. The chemical liquid is supplied at a controlled flow rate that simultaneously achieves both replenishment and silicon concentration adjustment, eliminating the need for sequential execution and reducing total replenishment time
2Manufacturing precision
If the dummy substrate is immersed in the processing liquid after replenishing the chemical liquid, then the silicon concentration is adjusted to a predetermined concentration, but the number of working steps increases
Solution Approach 1:
The patent merges the chemical liquid supply operation with the silicon concentration adjustment operation into a single unified process. By controlling the supply flow rate of the chemical liquid, both replenishment and concentration adjustment are achieved simultaneously, reducing the number of discrete working steps from two to one
3Ease of operation
If the chemical liquid is supplied at a constant flow rate, then the supply is simple to control, but the silicon concentration cannot be precisely maintained during replenishment
Solution Approach 1:
The patent changes the flow rate parameter of the chemical liquid supply from a constant value to a controlled variable. The supply flow rate is adjusted based on the relationship between replenishment amount and silicon concentration, allowing precise maintenance of the predetermined silicon concentration while still maintaining relatively simple control through automated flow rate adjustment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the number of working steps and shortens the replenishment time by integrating the chemical liquid supply and silicon concentration adjustment, maintaining the silicon concentration at a predetermined level before replenishment.
Implementation Method 1
dissolving a set replenishment amount of the silicon in the processing liquid
Data Source
AI summary
There is provided a substrate processing method for performing an etching processing by immersing a substrate in a processing liquid containing a chemical liquid and silicon, the substrate processing method including: a preparation step of setting a supply flow rate of the chemical liquid based on a replenishment amount of the chemical liquid and a replenishment amount of the silicon; and a replenishment step of supplying the chemical liquid at the set supply flow rate of the chemical liquid and dissolving a set replenishment amount of the silicon in the processing liquid.