Semiconductor Substrate Silylation for Bevel Drainage Control
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Solution Overview
Problem
The existing surface treatment methods for semiconductor substrates fail to ensure stable manufacturing processes due to inadequate liquid drainage at the edge portions, leading to rinsing solutions wrapping around to the back surface, which affects the stability and quality of the manufacturing process.
Innovation Solution
A surface treatment method using a silylating agent-based composition that sets the receding contact angle of 2-propanol (IPA) and pure water to specific values, improving liquid drainage characteristics by controlling the IPA and water receding contact angles, thereby preventing the rinsing solution from wrapping around to the back surface during the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a water-repellent protective film is formed on the substrate surface to clean and dry the substrate, then pattern collapse is prevented, but manufacturing stability is insufficient
Solution Approach 1:
The invention applies different contact angle characteristics to different regions of the substrate. The bevel region is specifically treated to have a receding contact angle of 40° or more, while the pattern formation region maintains its original water-repellent properties. This local differentiation ensures proper liquid drainage at the bevel without affecting pattern integrity.
Solution Approach 2:
The invention changes the contact angle parameter of the bevel region by applying a surface treatment agent that increases the receding contact angle to 40° or more. This parameter modification fundamentally alters the liquid drainage behavior at the bevel, preventing wraparound while maintaining overall manufacturing stability.
2Object-generated harmful factors
If the substrate is rinsed with rinsing solution, then cleaning is achieved, but the rinsing solution wraps around to the back surface along the inclined surface
Solution Approach 1:
The invention applies a surface treatment agent to the bevel region before rinsing to preliminarily establish high receding contact angle characteristics. This preliminary action creates a barrier that prevents the rinsing solution from wrapping around to the back surface during the subsequent rinsing operation.
Solution Approach 2:
The surface treatment is applied specifically to the bevel region where wraparound occurs, creating localized hydrophobic properties with a receding contact angle of 40° or more. This local quality change directs liquid drainage away from the bevel and prevents harmful wraparound to the back surface.
3Ease of operation
If the receding contact angle is increased to improve liquid drainage, then wraparound is suppressed, but manufacturing stability must be ensured
Solution Approach 1:
The invention carefully localizes the high receding contact angle treatment to only the bevel region, while maintaining appropriate contact angle characteristics in the pattern formation region. This selective application ensures improved liquid drainage at the bevel without compromising manufacturing stability in the patterned areas.
Solution Approach 2:
The invention optimizes the receding contact angle parameter to a specific range (40° or more) at the bevel region through controlled application of surface treatment agents. This precise parameter control achieves sufficient liquid drainage improvement while maintaining overall manufacturing stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances manufacturing stability by ensuring effective liquid drainage and preventing solution wraparound, maintaining the integrity of the semiconductor substrate during processing.
Implementation Method 1
a surface treatment step of bringing a surface treatment agent composition including a silylating agent into contact with the pattern formation region and the bevel region on the main surface of the semiconductor substrate
Implementation Method 2
an IPA receding contact angle is 3° or more at a room temperature of 25° C. and/or a water receding contact angle is 40° or more at the room temperature of 25° C.
Data Source
AI summary
A surface treatment method for semiconductor substrates of the present invention is a treatment method of treating a main surface of a semiconductor substrate that has, on the main surface of the substrate, a pattern formation region in which a pattern having a concave-convex structure with a pattern dimension of 30 nm or less is formed and a bevel region which is formed on a periphery of the pattern formation region, the method including a surface treatment step of bringing a surface treatment agent composition including a silylating agent into contact with the pattern formation region and the bevel region on the main surface of the semiconductor substrate, in which, with respect to a surface of a silicon oxide substrate brought into contact with the surface treatment agent composition, an IPA receding contact angle is 3° or more at a room temperature of 25° C., and/or a water receding contact angle is 40° or more at the room temperature of 25° C.