Semiconductor Substrate Slits for Warpage Suppression
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Solution Overview
Problem
In the manufacturing process of stacked-type semiconductor devices using TSVs, silicon substrates with minimal elastic deformation face challenges in matching bump heights due to warpage, leading to unreliable electrical connections.
Innovation Solution
The implementation of slits, either continuously or intermittently formed in a grid or cross shape on the semiconductor substrate, which relieve internal stress and suppress warpage, allowing for precise matching of bump heights and improved connection reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon substrates are connected with bumps in stacked-type semiconductor devices, then electrical connection between substrates is achieved, but warpage of substrates causes mismatch in bump heights leading to unreliable connections
Solution Approach 1:
The semiconductor substrate is segmented by forming slits that divide the substrate into multiple regions. This segmentation allows differential movement and stress distribution across the substrate, enabling better accommodation of thermal expansion differences and reducing overall warpage, thereby improving bump height consistency
Solution Approach 2:
The physical structure of the substrate is modified by introducing slits, which changes the mechanical parameters of the substrate. This structural parameter change reduces the substrate's resistance to deformation and allows for more uniform bump heights across the substrate surface
2Adaptability or versatility
If silicon substrates are used in stacked-type semiconductor devices, then high functionality is achieved, but the substrates hardly undergo elastic deformation causing warpage issues
Solution Approach 1:
By dividing the rigid silicon substrate into segmented regions through slits, the substrate gains improved adaptability to thermal and mechanical stresses while maintaining its structural integrity and high functionality
Solution Approach 2:
The slit structure creates a more flexible mechanical configuration within the rigid silicon substrate, allowing controlled deformation and stress relief without compromising the substrate's overall structural stability
3Reliability
If warpage of semiconductor substrates is suppressed, then reliability of electrical connections is improved, but additional manufacturing steps are required
Solution Approach 1:
The slits are formed in the substrate before the bump formation process, performing the warpage suppression action in advance. This preliminary structural modification prevents warpage-related issues before they affect bump height matching, simplifying subsequent manufacturing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The formation of slits effectively suppresses warpage in semiconductor substrates, ensuring reliable electrical connections and enhancing the yield of 3-D packaging processes.
Implementation Method 1
slits, either continuously or intermittently formed in a grid or cross shape on the semiconductor substrate, which relieve internal stress and suppress warpage
Data Source
AI summary
A semiconductor device according to the present embodiment includes a semiconductor substrate, an insulating film and a conductive film. The insulating film is disposed on a first surface of the semiconductor substrate. The insulating film covers a semiconductor element. The conductive film penetrates the semiconductor substrate across from the first surface to a second surface opposite to the first surface. On the second surface, a trench continuously or intermittently exists across from a first end part side of the second surface to a second end part side thereof.