Substrate Support Stack With Vertical Electric Field for Annealing
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Solution Overview
Problem
Current substrate processing technologies face challenges in uniformly heating substrates and applying directional electric fields, which can lead to inefficient material diffusion and reduced yield in semiconductor device fabrication.
Innovation Solution
A substrate processing apparatus is designed with a vertically stacked substrate support system, including lower and upper electrodes, and a heater that surrounds the process space, allowing for uniform heating and the application of a vertical directional electric field to enhance material diffusion during annealing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional substrate processing apparatus uses a single heater positioned away from the substrate, then the device structure is simple, but the substrate cannot be heated uniformly leading to poor manufacturing precision
Solution Approach 1:
The heater is divided into multiple heating zones positioned at different locations around the substrate support. Each heating zone can be independently controlled to provide localized heating, ensuring uniform temperature distribution across the substrate surface while maintaining a manageable device structure through modular design
Solution Approach 2:
The heater configuration transitions from a single-point or single-plane heating approach to a multi-dimensional heating arrangement with heaters positioned at different heights and angular positions around the substrate. This spatial distribution in multiple dimensions enables uniform heat coverage across the entire substrate surface
2Productivity
If no electric field is applied during substrate processing, then the device structure is simple, but material diffusion efficiency is reduced leading to lower productivity
Solution Approach 1:
The heating function and electric field generation function are merged into an integrated substrate processing system. The same structural components (heaters and electrodes) that provide thermal processing also generate the electric fields necessary for enhanced material diffusion, eliminating the need for separate electric field generation equipment
Solution Approach 2:
The substrate support structure is designed to serve multiple functions: it holds the substrate, provides heating through integrated heaters, and generates electric fields through integrated electrodes. This multi-functional design enhances material diffusion efficiency without requiring additional dedicated components for each function
3Manufacturing precision
If substrates are processed without vertical electric field application, then the manufacturing process is simple, but material diffusion depth and uniformity are insufficient reducing manufacturing precision
Solution Approach 1:
The vertical electric field is applied specifically in the region where material diffusion is most critical, with electrodes positioned to create concentrated field lines through the substrate thickness. This localized field application enhances diffusion uniformity where needed most without requiring complex electric field distribution throughout the entire processing chamber
Solution Approach 2:
The electrode arrangement introduces a vertical dimension to the electric field application, with electrodes positioned above and below the substrate to create field lines perpendicular to the substrate surface. This vertical field configuration enhances material diffusion uniformity through the substrate thickness, complementing the horizontal heating zones
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures uniform heating and deep diffusion of materials into substrates, improving the yield and efficiency of semiconductor fabrication processes.
Implementation Method 1
a heater that horizontally surrounds a process space between the support member and the upper electrode
Implementation Method 2
applying a power to at least one selected from the lower electrode and the upper electrode
Data Source
AI summary
The present disclosure relates to substrate processing apparatuses and substrate processing methods. An example substrate processing apparatus comprises an outer chamber that provides an internal space, a process tube in the outer chamber, a heater between the outer chamber and the process tube, and a boat inserted into the process tube. The boat includes a plurality of substrate support devices that are vertically stacked. Each substrate support device of the plurality of substrate support devices includes a support member that supports a substrate, a lower electrode below the support member, and an upper electrode above the support member and spaced apart from the support member.