Substrate Stage Layout for RF Heating and Noise Isolation
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Solution Overview
Problem
Current substrate stages for semiconductor processing in CVD processes face challenges in effectively fixing and heating semiconductor substrates due to limitations in electrostatic and thermal management, leading to inefficiencies in deposition processes.
Innovation Solution
A substrate stage design incorporating a platen with an RF electrode and resistance heating element, along with a shaft having specific through holes for RF, heater, and sensor rods, which utilizes electrostatic force and heat to securely fix and thermally manage semiconductor substrates, while minimizing noise interference and maximizing space utilization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an RF electrode and resistance heating element are integrated into the platen, then substrate fixation and thermal control are improved, but device complexity increases
Solution Approach 1:
The patent combines the RF electrode and resistance heating element into a single platen structure, integrating multiple functions (substrate fixation via RF and heating via resistance element) into one component. This merging approach improves reliability by ensuring coordinated operation while managing device complexity through unified design.
Solution Approach 2:
The platen is designed as a multi-functional component that simultaneously performs substrate fixation through the RF electrode and thermal control through the resistance heating element. This universal design allows a single component to handle multiple critical functions, improving overall system reliability without proportionally increasing complexity.
2Volume of moving object
If multiple through holes are provided in the shaft for RF rod, heater rods, and sensor rod, then space utilization is improved, but manufacturing precision requirements increase
Solution Approach 1:
The shaft is segmented with multiple through holes positioned at specific locations to accommodate different rods (RF rod, heater rods, sensor rod). This segmentation allows each rod to be independently positioned and installed, optimizing space utilization while enabling separate manufacturing and assembly processes that can maintain precision requirements.
Solution Approach 2:
Different regions of the shaft are designed with specific through holes tailored to the requirements of each rod type. The central region contains the first through hole for the RF rod, while the peripheral region contains second through holes for heater rods and a third through hole for the sensor rod. This localized design optimizes space for each component while allowing differentiated manufacturing approaches for different regions.
3Object-affected harmful factors
If the RF rod is spaced apart from the inner wall of the first through hole, then noise interference is reduced, but device complexity increases
Solution Approach 1:
The RF rod is extracted from direct contact with the inner wall of the first through hole and positioned at a spaced distance. This extraction removes the source of noise interference (electromagnetic noise from RF) from proximity to other components, reducing harmful effects without requiring complex shielding or isolation structures.
Solution Approach 2:
The space between the RF rod and the inner wall of the first through hole acts as an intermediary region that isolates the RF rod from other components. This spatial intermediary reduces electromagnetic noise interference without requiring additional complex shielding materials or structures, achieving noise reduction through simple geometric separation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the secure fixation and thermal control of semiconductor substrates during CVD processes, improving deposition efficiency and reducing noise interference, thereby optimizing the semiconductor processing apparatus.
Implementation Method 1
a first power supply portion electrically connected to the RF rod, the first power supply portion configured to supply electrostatic force to the RF electrode to fix the semiconductor substrate on the seating surface
Implementation Method 2
the platen having a resistance heating element and an RF electrode that is provided adjacent to the seating surface
Implementation Method 3
a plurality of heater rods respectively provided within the plurality of second through holes, the plurality of heater rods electrically connected to the resistance heating element
Data Source
AI summary
A substrate processing apparatus includes a chamber providing a space for performing a semiconductor process on a semiconductor substrate, and a substrate stage configured to support the semiconductor substrate. The substrate stage includes a platen having a seating surface to support the semiconductor substrate, the platen having a resistance heater and an RF electrode adjacent to the seating surface, a shaft under the platen, the shaft having a first through hole in a central region and a plurality of second through holes in a peripheral region surrounding the central region, an RF rod spaced apart from an inner wall of the first through hole, the RF rod electrically connected to the RF electrode, and a plurality of heater rods respectively within the plurality of second through holes and electrically connected to the resistance heater.