Semiconductor Substrate Stressing via Thermal Expansion and Pressure

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Solution Overview

Problem

There is a continuing need for apparatus capable of effectively stressing semiconductor substrates, which existing technologies have not adequately addressed.

Innovation Solution

The apparatus includes a chamber with a heater and a substrate holder that can bend or stress the semiconductor substrate using a combination of thermal expansion and pressure modulation, with features such as elongate pins, rings, and a pressure modulator to exert stress on the substrate, allowing it to move between a planar and bent position.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a substrate holder with multiple support points is used to stress the substrate, then stress distribution is improved, but device complexity increases

Engineering Contradiction:
Improvestress distribution uniformityVSAvoidsubstrate holder structure
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The substrate holder is segmented into multiple discrete support pins arranged in specific patterns (e.g., triangular, circular) rather than a continuous support surface. This segmentation allows selective contact at key stress points while simplifying the overall holder structure to a framework of isolated pins rather than a complex continuous support mechanism.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the substrate holder provide different support characteristics - some pins contact the substrate to provide stress concentration points, while other pins provide support without stress. The holder structure itself has varying thickness and material properties in different regions to optimize stress distribution while maintaining structural simplicity.

Inventive Principle:
Principle #3Local quality

2Device complexity

If thermal expansion is used to stress the substrate, then stress application is simplified, but temperature control precision must be maintained

Engineering Contradiction:
Improvestress application mechanismVSAvoidtemperature control
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The system utilizes changes in thermal expansion parameters of different materials (substrate vs. holder) to generate stress. By selecting materials with significantly different thermal expansion coefficients and controlling the temperature change magnitude, the system achieves effective stress application through straightforward thermal cycling rather than complex mechanical actuation mechanisms.

Inventive Principle:
Principle #35Parameter changes

3Stress or pressure

If pressure differential is applied across the substrate, then stress magnitude is improved, but energy consumption increases

Engineering Contradiction:
Improvestress magnitudeVSAvoidenergy for pressure modulation
Core Design Contradiction:
Stress or pressureVSUse of energy by moving object

Solution Approach 1:

A pressure modulator uses pneumatic or hydraulic principles to create pressure differentials across the substrate by controlling fluid flow through channels in the substrate holder. This approach generates substantial stress forces through relatively small energy inputs by leveraging fluid pressure amplification rather than direct mechanical force application.

Inventive Principle:
Principle #29Pneumatics and hydraulics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus efficiently applies stress to semiconductor substrates, enabling processes like epitaxial layer deposition and ensuring uniform stress distribution, thereby improving substrate processing outcomes.

Implementation Method 1

The apparatus includes a chamber with a heater and a substrate holder that can bend or stress the semiconductor substrate using a combination of thermal expansion and pressure modulation

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Implementation Method 2

a pressure modulator for causing a pressure differential across the substrate sufficient to exert stress on the substrate

Methodology Applied
Scientific EffectPressure differential: Pressure Gradient

Data Source

PatentUS11764071B2Apparatus for stressing semiconductor substrates
Publication Date: 2023.09.19 GLOBALWAFERS CO LTD
  • US11764071B2 patent drawing
  • US11764071B2 patent drawing
  • US11764071B2 patent drawing

AI summary

Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.