Substrate Stretching for Fine Line Width Pattern Fabrication
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Solution Overview
Problem
Conventional roll-to-roll printing processes face limitations in forming fine line widths and distances between lines, making it difficult to achieve high integration and fineness in pattern formation for semiconductor and electronic products.
Innovation Solution
A method involving stretching a substrate to form a base layer, removing a predetermined region to create a first pattern with a specific line width and height, and then contracting the substrate to form a second pattern with a narrower line width and increased height, allowing for the transfer of the second pattern onto a base member.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional R2R printing process is used, then mass production capability is achieved, but line width fineness and distance between lines are insufficient
Solution Approach 1:
The substrate is stretched before forming the pattern, creating a pre-deformed state that enables finer pattern formation. The pattern is formed on the stretched substrate and then the substrate is contracted to achieve the final fine pattern on the original substrate, effectively separating the pattern formation step from the final product state
Solution Approach 2:
The physical state of the substrate is changed by applying tensile force to stretch it, which modifies the substrate's dimensions and allows for formation of patterns with different line widths and spacing. After pattern formation, the tensile force is removed to restore the substrate to its original state, transferring the pattern with enhanced fineness
2Manufacturing precision
If conventional R2R printing process is used, then simple process structure is maintained, but high integration of pattern is not achieved
Solution Approach 1:
The substrate is stretched before forming the pattern, creating a pre-deformed state that enables finer pattern formation. The pattern is formed on the stretched substrate and then the substrate is contracted to achieve the final fine pattern on the original substrate, effectively separating the pattern formation step from the final product state
Solution Approach 2:
The substrate transitions from a static state to a dynamic stretched state during pattern formation, then returns to its original state. This dynamic approach allows the same substrate to serve multiple functions: providing a stable base for pattern formation while enabling fine pattern features through temporary deformation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of fine patterns with high aspect ratios by reducing line widths and increasing pattern heights, overcoming the limitations of conventional printing processes and achieving high integration and fineness.
Implementation Method 1
stretching a first substrate and preparing a second substrate... removing a tensile force applied to the second substrate to restore the second substrate back to being the first substrate
Data Source
AI summary
Provided is a fabricating method of a pattern, which includes preparing a first substrate having a first width and a first thickness, stretching the first substrate and preparing a second substrate having a second width and a second thickness, forming a base layer made of a material of a pattern which will be formed on the second substrate, removing a predetermined region of the base layer and forming a first pattern having a first line width and a first height on the second substrate, and removing a tensile force applied to the second substrate to restore the second substrate back to being the first substrate and forming a second pattern having a second line width and a second height on the first substrate. Fineness of a line width can be achieved by forming the first pattern in a state in which the substrate is stretched, contracting a line width of the first pattern while restoring the stretched substrate, and forming the second pattern having a contracted line width on the restored substrate such that high integration can be achieved.