Substrate Drying via Supercritical Fluid and Particle Removal
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Solution Overview
Problem
In semiconductor manufacturing, the drying process after liquid processing can cause pattern collapse and leave fine particles on the substrate surface, which existing methods struggle to prevent effectively.
Innovation Solution
A substrate processing method involving the formation of a liquid film of a protection liquid, followed by supercritical drying using a supercritical fluid to remove the protection liquid, and subsequent heating or ultraviolet irradiation to eliminate remaining particles within the same processing unit, reducing particle residue and preventing pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a liquid film of protection liquid is formed on the substrate surface to prevent pattern collapse during drying, then pattern integrity is improved, but fine particles remain on the substrate surface after drying
Solution Approach 1:
The patent extracts and removes particles from the substrate surface after supercritical drying through a separate particle removal step, eliminating the harmful byproduct while preserving the benefits of supercritical drying for pattern integrity
Solution Approach 2:
The patent combines supercritical drying and particle removal in a continuous process within the same processing unit, maintaining the protective liquid film throughout drying and immediately following with particle removal without substrate transfer, thus preserving pattern integrity while eliminating particles
2Stability of the object's composition
If the protection liquid film thickness is increased to suppress particle removal during transfer, then pattern collapse is prevented, but processing time and complexity increase
Solution Approach 1:
The patent merges the drying process and particle removal process into a single processing unit, eliminating the need for substrate transfer between units and reducing processing time while maintaining pattern stability through continuous protection liquid film presence
Solution Approach 2:
The patent performs particle removal immediately after drying while the substrate is still in the processing unit and the protection liquid film is intact, eliminating delays associated with substrate transfer and additional processing steps
3Manufacturing precision
If multiple processing units are used for liquid processing and supercritical drying, then processing quality is improved, but device complexity and particle contamination risk increase
Solution Approach 1:
The patent combines liquid processing and supercritical drying functions in a single processing unit, maintaining high processing quality through controlled protection liquid film management while reducing device complexity by eliminating separate processing units and transfer mechanisms
Solution Approach 2:
The processing unit is designed to perform multiple functions including liquid processing, supercritical drying, and particle removal within a single chamber, reducing the overall number of units required while maintaining processing quality through integrated control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses particle residue on the substrate surface, enhances processing efficiency by reducing the need for additional transfer steps, and maintains the integrity of the pattern by efficiently removing particles without compromising the substrate's characteristics.
Implementation Method 1
drying, by using a supercritical fluid, the substrate to remove the protection liquid from the surface of the substrate
Data Source
AI summary
A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.


