Substrate Treatment with Supercritical Fluid for Pattern Integrity
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Solution Overview
Problem
Conventional substrate treatment processes, particularly in photolithography, face challenges in preventing pattern damage and inefficiencies due to the use of water-based chemical solutions, which can lead to pattern leaning or collapse during drying and cleaning.
Innovation Solution
A substrate treating apparatus and method utilizing a sequence of process fluids, including pure water, hydrophobic organic solvents, and surfactants like sorbitan esters, followed by supercritical fluid treatment to avoid water-related issues and maintain pattern integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If water-based chemical solutions are used in substrate treatment, then cleaning capability is improved, but pattern damage occurs due to water-related issues during drying and cleaning
Solution Approach 1:
The patent changes the chemical parameter of the process fluid from water-based to organic solvent-based. Specifically, it uses hydrophobic organic solvents (such as hexane, heptane, or petroleum ether) instead of water-based solutions, which eliminates water-related pattern damage while maintaining effective cleaning capability through the organic solvent's ability to dissolve and remove contaminants.
Solution Approach 2:
The patent employs supercritical fluid extraction where the organic solvent transitions to a supercritical state under high pressure and temperature conditions. This phase transition allows the solvent to penetrate and remove contaminants effectively, then returns to liquid state for easy separation, achieving thorough cleaning without water-induced pattern damage.
2Productivity
If conventional drying processes are used after developer application, then processing efficiency is improved, but pattern leaning or collapse occurs
Solution Approach 1:
The patent changes the drying mechanism by using supercritical fluid extraction instead of conventional thermal drying. The process uses high pressure and temperature to create a supercritical state that removes organic solvents and contaminants without the rapid evaporation and surface tension forces that cause pattern leaning or collapse in conventional drying.
Solution Approach 2:
The patent replaces the mechanical/thermal drying system with a supercritical fluid extraction system. Instead of using heat and air flow to evaporate solvents (which causes pattern damage), it uses controlled pressure and temperature to achieve phase transition of the solvent, allowing gentle and uniform removal without mechanical stress on the pattern.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach effectively prevents pattern damage and enhances cleaning efficiency by using a supercritical fluid treatment that substitutes and removes organic solvents without water, maintaining pattern precision and preventing collapse.
Implementation Method 1
a second process chamber to treat the substrate applied with the organic solvent and introduced, through a supercritical fluid
Data Source
AI summary
A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a first process chamber to apply an organic solvent to a substrate applied with a developer and introduced, and a second process chamber to treat the substrate applied with the organic solvent and introduced, through a supercritical fluid.