Substrate Support Electrode Layout for Stable Plasma Bias Coupling
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Solution Overview
Problem
Existing plasma processing apparatuses face challenges in reducing the influence of phase differences between electrical biases on plasma processing, leading to potential inconsistencies in substrate processing.
Innovation Solution
The substrate support system includes a first region for holding the substrate and a second region for holding an edge ring, with first and second electrodes receiving electrical biases. The second electrode extends below the first electrode, allowing for capacitive coupling and reducing potential differences due to phase differences in the electrical biases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If two bias power sources are connected to the bias electrode and ring electrode respectively to form a flat plasma sheath, then plasma processing capability is improved, but phase differences between electrical biases cause potential differences that lead to processing inconsistencies
Solution Approach 1:
A capacitor is introduced as an intermediary component connected between the bias electrode and ring electrode. This capacitor couples the two electrodes electrically, allowing charge transfer that compensates for potential differences arising from phase differences between the two bias power sources, thereby reducing harmful effects on plasma processing consistency
Solution Approach 2:
The electrical parameters (potential and charge distribution) between the bias electrode and ring electrode are dynamically adjusted through the capacitor. By changing the electrical state of the system in response to phase differences, the potential differences are compensated, improving substrate processing consistency
2Manufacturing precision
If the second electrode extends below the first electrode to face it within the first region, then capacitive coupling is achieved and potential differences are reduced, but device structure becomes more complex
Solution Approach 1:
The second electrode is positioned within the chamber space in such a way that it extends below the first electrode, creating a nested spatial arrangement. This nesting allows the electrodes to face each other and form a capacitor structure without requiring additional external space, achieving capacitive coupling while managing structural complexity
Solution Approach 2:
The electrode configuration utilizes the vertical dimension by extending the second electrode below the first electrode in the depth direction. This dimensional arrangement enables capacitive coupling and potential difference control without increasing complexity in the horizontal plane, effectively managing the device structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the potential difference between the substrate and the edge ring, thereby minimizing the influence of phase differences on plasma processing, resulting in more consistent and efficient substrate processing.
Implementation Method 1
since the first electrode and the second electrode face each other in the first region, the first electrode and the second electrode are capacitively coupled to each other in the first region
Implementation Method 2
The plasma processing apparatus is provided with two bias power sources. The two bias power sources are connected to the bias electrode and the ring electrode, respectively, in order to form a flat plasma sheath on the substrate
Data Source
AI summary
The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.