Substrate Support Channels for Bevel Backside Deposition Elimination
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor processing technologies face challenges in achieving uniform deposition across substrates, often resulting in unwanted material deposition on edge and backside regions, which can lead to increased queue times and substrate damage during subsequent etch processes.
Innovation Solution
The implementation of a semiconductor processing system with a substrate support featuring channels and a fluid distribution path that includes a radial and vertical portion, an edge ring, and a shadow ring to limit or remove deposition on edge and backside regions by flowing purge fluids or plasma effluents through these channels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition processes are used, then material is deposited on the substrate, but unwanted deposition occurs on edge and backside regions
Solution Approach 1:
The substrate support is segmented into multiple functional zones with separate fluid delivery paths: a central region for substrate deposition, an edge region with purge fluid delivery, and a backside region with separate purge fluid delivery. This segmentation allows independent control of deposition and purge operations in different spatial zones, preventing unwanted deposition on edge and backside regions while maintaining uniform deposition on the substrate surface.
Solution Approach 2:
Different regions of the substrate support are provided with different fluid delivery characteristics: the central substrate region receives deposition precursors, the edge region receives purge fluids through channels positioned at the periphery, and the backside region receives purge fluids through separately positioned channels. This local differentiation of fluid delivery quality enables precise control over where deposition occurs and where purge action is applied, eliminating harmful edge and backside deposition.
2Reliability
If purge fluids are flowed through channels to remove edge and backside deposition, then substrate damage is reduced, but queue times increase
Solution Approach 1:
Purge fluid channels are integrated into the substrate support structure and positioned to deliver purge fluids to edge and backside regions during the deposition process itself. This preliminary action prevents deposition from occurring on edge and backside regions in the first place, eliminating the need for subsequent etch processes to remove unwanted deposition, thereby reducing processing queue time while maintaining substrate integrity.
Solution Approach 2:
The purge fluid delivery system operates continuously during the deposition process, maintaining a continuous protective flow of purge fluid over the edge and backside regions. This continuous action prevents deposition accumulation throughout the entire deposition cycle, eliminating the need for intermittent or post-process removal steps, thus reducing total processing time while ensuring substrate integrity.
3Manufacturing precision
If etch processes are used to remove backside deposition, then substrate quality is maintained, but substrate damage increases
Solution Approach 1:
Purge fluids are delivered to the backside region through dedicated channels positioned on the substrate support before deposition can occur on the backside surface. This preliminary anti-action prevents deposition from forming on the backside region, eliminating the need for subsequent etch processes that would cause substrate damage, thereby maintaining substrate quality without introducing harmful damage.
Solution Approach 2:
The purge fluid delivery system converts the potential harm of deposition on edge and backside regions into a benefit by using the same purge fluid mechanism to both prevent deposition and protect the substrate. The purge fluids serve a dual function: they prevent unwanted deposition from occurring and simultaneously protect the substrate from damage by eliminating the need for aggressive etch removal processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces queue times and minimizes substrate damage by effectively preventing or removing deposition on edge and backside regions, improving the overall quality and efficiency of semiconductor processing.
Implementation Method 1
a remote plasma source unit coupled with the fluid source. The remote plasma source unit may be configured to deliver radical species through the central channel of the substrate support
Implementation Method 2
The remote plasma source unit may be configured to deliver radical species through the central channel of the substrate support
Implementation Method 3
Each channel of the plurality of channels may include a radial portion extending outward from a central channel through the support plate. Each channel may also include a vertical portion formed at an exterior region of the support plate fluidly coupling the radial portion with a support surface of the support plate
Data Source
AI summary
Exemplary semiconductor processing systems may include a chamber body comprising sidewalls and a base. The systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support plate defining a plurality of channels through an interior of the support plate. Each channel of the plurality of channels may include a radial portion extending outward from a central channel through the support plate. Each channel may also include a vertical portion formed at an exterior region of the support plate fluidly coupling the radial portion with a support surface of the support plate. The substrate support may include a shaft coupled with the support plate. The central channel may extend through the shaft. The systems may include a fluid source coupled with the central channel of the substrate support.