Low Thermal Mass Substrate Support for Dynamic Plasma Temperature Control
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Solution Overview
Problem
Existing substrate supports in plasma processing apparatuses lack dynamic temperature control, leading to variations in etch rate and selectivity during plasma etching and deposition processes, especially as substrate size increases and feature sizes decrease, causing potential wafer damage and altering chemical reactions.
Innovation Solution
A substrate support with a low thermal mass heat transfer member, including a metallic body with flow passages for liquid circulation and a heat transfer gas source, allowing for rapid heating and cooling, and controlled by a liquid and gas source with a controller for precise temperature management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a traditional substrate support with high thermal mass is used, then temperature stability is maintained, but dynamic temperature adjustment capability deteriorates
Solution Approach 1:
The substrate support is divided into multiple independent heating zones and cooling zones, allowing different regions to be controlled independently. This segmentation enables rapid local temperature adjustments without requiring the entire support structure to change temperature, thus improving dynamic response while maintaining overall thermal stability.
Solution Approach 2:
The patent implements dynamic temperature control by using controllable heating elements and cooling channels that can rapidly adjust temperature in response to real-time process conditions. The system transitions from static temperature maintenance to active dynamic regulation, allowing quick temperature changes when needed while maintaining stability during steady-state operation.
2Productivity
If substrate size increases, then processing capacity is improved, but temperature uniformity deteriorates
Solution Approach 1:
The substrate support surface is divided into multiple independently controlled heating and cooling zones that can be regulated separately. This allows precise temperature control across different regions of large substrates, ensuring uniform temperature distribution even as substrate size increases and processing capacity improves.
Solution Approach 2:
Different zones of the substrate support are provided with tailored heating and cooling capabilities based on local process requirements. This local quality approach ensures that each region of a large substrate receives appropriate thermal management, maintaining temperature uniformity across the entire substrate surface.
3Manufacturing precision
If dynamic temperature control is implemented, then processing precision is improved, but device complexity increases
Solution Approach 1:
The substrate support structure is designed to perform multiple functions: mechanical support, thermal management, and electrical isolation. By integrating heating elements, cooling channels, and electrostatic chucking capabilities into a single unified structure, the patent reduces overall system complexity while achieving precise dynamic temperature control for consistent etch rates.
Solution Approach 2:
The patent combines heating zones, cooling zones, and electrostatic chucking functionality into an integrated substrate support structure. This merging of functions reduces the number of separate components and control systems needed, thereby managing device complexity while maintaining precise temperature control capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables dynamic thermal control of substrates, enhancing uniformity in plasma processing by rapidly adjusting temperatures, reducing the risk of wafer damage and improving the consistency of etch rates and material deposition properties.
Implementation Method 1
The heat transfer member includes at least one flow passage through which liquid can be circulated to heat and/or cool the heat transfer member
Implementation Method 2
The electrostatic chuck has a support surface on which a substrate can be electrostatically clamped
Data Source
AI summary
A substrate support useful for a plasma processing apparatus includes a metallic heat transfer member and an overlying electrostatic chuck having a substrate support surface. The heat transfer member includes one or more passage through which a liquid is circulated to heat and/or cool the heat transfer member. The heat transfer member has a low thermal mass and can be rapidly heated and/or cooled to a desired temperature by the liquid, so as to rapidly change the substrate temperature during plasma processing.